Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Adam Matthew Bumgarner"'
Autor:
T. Storey, Bin Li, K.K. Hunt, L. Burcin, John C. Rodgers, Adam Matthew Bumgarner, M. Graziano
Publikováno v:
Symposium Non-Volatile Memory Technology 2005..
The first generation of C-RAM memory is designed to greatly exceed (in density, write speed, endurance) the existing non-volatile memory solutions for space and to close the gap that exists between system requirements and availability. Based on the s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20c9851629abeacd2eb9d8baa17d5178
https://doi.org/10.1109/nvmt.2005.1541413
https://doi.org/10.1109/nvmt.2005.1541413
Autor:
J. Stobie, Thomas M. Storey, K.K. Hunt, J. Maimon, Daniel Pirkl, John C. Rodgers, W. Neiderer, Adam Matthew Bumgarner, M. Graziano, L. Burcin, Bin Li, B. Orlowsky
Publikováno v:
2006 7th Annual Non-Volatile Memory Technology Symposium.
A 4 Mbit non-volatile chalcogenide-random access memory (C-RAMTM) has been designed and fabricated in RH 25, a radiation hardened CMOS technology. The top-down design focused on accommodating chalcogenide process variations and satisfying space syste
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d40a4fa0987c5d56894c7b02a552f3f5
https://doi.org/10.1109/nvmt.2006.378879
https://doi.org/10.1109/nvmt.2006.378879