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Publikováno v:
2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM).
A helium implantation is a common technique used for electron and hole lifetime control in semiconductor devices. Siemieniec [1] shows that suitable annealing conditions after the helium implantation lead to an increased conductivity of N-type silico
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0927d0841a4a25e52634fe61d65e6c53
https://doi.org/10.1109/asdam.2016.7805938
https://doi.org/10.1109/asdam.2016.7805938
