Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Adam J. Williams"'
Publikováno v:
Journal of Materials Research. 32:1611-1617
To achieve the first demonstration of non-polar a-plane gallium nitride (GaN) epitaxy on (0 1 0) gallium oxide substrates by metal organic chemical vapor deposition (MOCVD), a low temperature AlGaN nucleation layer was engineered. Specific low temper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::030895d2857d58ac62be086e12e473bb
https://doi.org/10.1557/jmr.2017.126
https://doi.org/10.1557/jmr.2017.126
Autor:
Adam J. Williams, Binh-Minh Nguyen, Terry De Lyon, Rajesh D. Rajavel, Yu Cao, Diego E. Carrasco, Steven S. Bui, Brett Z. Nosho, Ray Li, J. Jenkins
Publikováno v:
Infrared Technology and Applications XLIV.
The main driving force for High Operating Temperature (HOT) detectors is the strong need for low cost, compact IR imaging solution capable of supporting a wide range of military and civilian applications. In the HOT regime where imagers can be cooled
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f01eb63f10b22efa00a222d493fc19ad
https://doi.org/10.1117/12.2306196
https://doi.org/10.1117/12.2306196
Autor:
Paul Hashimoto, Adam J. Williams, Adele E. Schmitz, Keisuke Shinohara, C. Butler, S. Kim, Robert Grabar, D. Regan, P. J. Willadsen, Shawn D. Burnham, Andrea Corrion, Miroslav Micovic, David F. Brown, Ivan Milosavljevic
Publikováno v:
IEEE Transactions on Electron Devices. 58:1063-1067
We have achieved the monolithic integration of two Ill-nitride device structures through the use of etching and re growth by molecular beam epitaxy (MBE). Using this regrowth technique, we integrated enhancement-mode (E-mode) and depletion-mode (D-mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::055e7fcae09a91e684610c0abcb3e6df
https://doi.org/10.1109/ted.2011.2105268
https://doi.org/10.1109/ted.2011.2105268
Autor:
Isaac Khalaf, Adam J. Williams, Miroslav Micovic, Joel C. Wong, David F. Brown, Andrea Corrion
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 36:030603
Selective etching of gallium nitride (GaN) over aluminum gallium nitride (AlxGa1-xN) with inductively coupled plasma and reactive ion etching (RIE) was examined using only chlorine and oxygen gasses. Etch selectivity was heavily influenced by the amo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::337fd3b44b058de59c3da48685f55794
https://doi.org/10.1116/1.5012530
https://doi.org/10.1116/1.5012530
Autor:
David F. Brown, Adam J. Williams, Keisuke Shinohara, Michael Johnson, Dayward Santos, Thomas C. Oh, Joel C. Wong, Shawn D. Burnham, John F. Robinson, C. Butler, Robert Grabar, Rongming Chu, S. Kim, Daniel Zehnder, Miroslav Micovic, Ivan Alvarado-Rodriguez, Andrea Corrion
Publikováno v:
IEEE Electron Device Letters. 34:1118-1120
We report a novel GaN heterojunction field-effect transistor device that incorporates vertically scaled epilayers, a nanoscale gate with integrated staircase-shaped field plates, and regrown ohmic contacts. This device technology has an unprecedented
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5525cdf8d7f6c5a7ffd26d186fe5dc4
https://doi.org/10.1109/led.2013.2273172
https://doi.org/10.1109/led.2013.2273172
Autor:
Sameh G. Khalil, Karim S. Boutros, Brian Hughes, Ray Li, Marcel Musni, Steve Chen, Rongming Chu, Austin Garrido, Daniel Zehnder, David F. Brown, Mary Chen, Adam J. Williams
Publikováno v:
71st Device Research Conference.
Power switches based on GaN-on-Si transistor technology have the advantage of high switching speed and low fabrication cost. This paper reports our recent advancement in device technology which enabled nanosecond switching at one kilowatt, with an un
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd1565597881e18649a814efd1cbbcb8
https://doi.org/10.1109/drc.2013.6633862
https://doi.org/10.1109/drc.2013.6633862
Publikováno v:
ECS Meeting Abstracts. :1999-1999
A series of Si1-xGex heterostructures were grown at different substrate temperatures using molecular beam epitaxy (MBE) on Si (100) substrates, where the composition x was varied in a “staircase” pattern by stepping down the germanium flux betwee
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ae3396e7461c244ef13f361c3a7df357
https://doi.org/10.1149/ma2016-02/30/1999
https://doi.org/10.1149/ma2016-02/30/1999
Publikováno v:
Applied Physics Letters. 108:112101
In a vertical GaN Schottky barrier diode, the free electron concentration n in the 6-μm-thick drift layer was found to greatly impact the diode reverse leakage current, which increased from 2.1 × 10−7 A to 3.9 × 10−4 A as n increased from 7.5
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e8780893537ced46a72feea388fbecb
https://doi.org/10.1063/1.4943946
https://doi.org/10.1063/1.4943946
Autor:
Adam J. Williams, Xu Chen, Karim S. Boutros, Ray Li, David F. Brown, Mary Chen, Rongming Chu, Daniel Zehnder, Scott Newell
Publikováno v:
2012 24th International Symposium on Power Semiconductor Devices and ICs.
We report a GaN-on-Si metal-insulator-semiconductor field-effect transistor (MISFET) with normally-off operation and 600-V blocking capability at 200 °C temperature. The temperature-dependences of threshold voltage, on-resistance, and leakage charac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e802226e4aab7abc50499ea6e14a2826
https://doi.org/10.1109/ispsd.2012.6229067
https://doi.org/10.1109/ispsd.2012.6229067
Autor:
P. J. Willadsen, David F. Brown, Ivan Milosavljevic, A. Kurdoghlian, Paul Hashimoto, Miroslav Micovic, Robert Grabar, Adam J. Williams, Keisuke Shinohara, Shawn D. Burnham, C. Butler
Publikováno v:
2011 International Electron Devices Meeting.
We report our second-generation mm-wave GaN double-heterostructure FET (DHFET) device technology which uses MBE regrowth of n+ ohmic regions to reduce parasitic resistance, and an improved T-gate process which demonstrated reduced current-collapse. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33e20e117d7a096a2bd1c249716da614
https://doi.org/10.1109/iedm.2011.6131584
https://doi.org/10.1109/iedm.2011.6131584