Zobrazeno 1 - 10
of 46
pro vyhledávání: '"Adam J Morgan"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 989-995 (2022)
1.2kV 4H-SiC MOSFETs with different junction depths of JFET and P-well regions were fabricated. For each JFET/P-well depth combination, channel lengths and JFET widths were also varied to compare specific on-resistance, breakdown voltage, and short-c
Externí odkaz:
https://doaj.org/article/f246663b53584e9e9e6b8a681ae4517a
Autor:
Tianshi Liu, Hua Zhang, Sundar Babu Isukapati, Emran Ashik, Adam J. Morgan, Bongmook Lee, Woongje Sung, Ayman Fayed, Marvin H. White, Anant K. Agarwal
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 129-138 (2022)
Silicon carbide (SiC) power integrated circuit (IC) technology allows monolithic integration of 600V lateral SiC power MOSFETs and low-voltage SiC CMOS devices. It enables application-specific SiC ICs with high power output and work under harsh (high
Externí odkaz:
https://doaj.org/article/da1ff765b0fc44b8a3a07ceecf6d277a
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 495-503 (2022)
SiC Schottky Barrier Diodes (SBDs) have been used in parallel with SiC MOSFETs as a freewheeling diode in power converter applications because the inherent PN body diode of the MOSFET has relatively high forward voltage drop, considerable reverse rec
Externí odkaz:
https://doaj.org/article/859cb6448bc44aa1ba441aa4e7d8c9ea
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 804-812 (2021)
A detailed structural analysis of 1.2 kV 4H-SiC MOSFETs with accumulation mode channel is reported in this paper. 1.2 kV SiC MOSFETs with a variety of cell designs were fabricated and compared with respect to the output and transfer characteristics,
Externí odkaz:
https://doaj.org/article/90459cb704784e98baaa02d16284db15
Autor:
Dongyoung Kim, Skylar DeBoer, Stephen A Mancini, Sundar Babu Isukapati, Justin Lynch, Nick Yun, Adam J Morgan, Seung Yup Jang, Woongje Sung
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2101162fefecea5ca6eaedf4f25b3c4
https://doi.org/10.1109/irps48203.2023.10118091
https://doi.org/10.1109/irps48203.2023.10118091
Publikováno v:
IEEE Electron Device Letters. 43:785-788
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9740203d5af107c81e0c8ffa6f98459
https://doi.org/10.1109/led.2022.3162156
https://doi.org/10.1109/led.2022.3162156
Publikováno v:
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::debe85c3a38cc9ccc7b9e390e4ecbfae
https://doi.org/10.1109/wipda56483.2022.9955256
https://doi.org/10.1109/wipda56483.2022.9955256
Publikováno v:
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e50890c43c3aa099c46f4e2faa4015d
https://doi.org/10.1109/wipda56483.2022.9955302
https://doi.org/10.1109/wipda56483.2022.9955302
Publikováno v:
2022 IEEE Energy Conversion Congress and Exposition (ECCE).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06cf6666aadd229a48fad5bde3285596
https://doi.org/10.1109/ecce50734.2022.9947481
https://doi.org/10.1109/ecce50734.2022.9947481
Autor:
Hua Zhang, Tianshi Liu, Utsav Gupta, Sundar Babu Isukapati, Emran Ashik, Adam J. Morgan, Bongmook Lee, Woongje Sung, Anant K. Agarwal, Ayman Fayed
Publikováno v:
2022 IEEE 65th International Midwest Symposium on Circuits and Systems (MWSCAS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf18c5af209d33e3d0f5f5cf333018c3
https://doi.org/10.1109/mwscas54063.2022.9859305
https://doi.org/10.1109/mwscas54063.2022.9859305