Zobrazeno 1 - 10
of 370
pro vyhledávání: '"Adam Gali"'
Autor:
Jakub Iwański, Krzysztof P. Korona, Mateusz Tokarczyk, Grzegorz Kowalski, Aleksandra K. Dąbrowska, Piotr Tatarczak, Izabela Rogala, Marta Bilska, Maciej Wójcik, Sławomir Kret, Anna Reszka, Bogdan J. Kowalski, Song Li, Anton Pershin, Adam Gali, Johannes Binder, Andrzej Wysmołek
Publikováno v:
npj 2D Materials and Applications, Vol 8, Iss 1, Pp 1-9 (2024)
Abstract Boron nitride exhibits various crystal structures. The subgroup of layered boron nitrides includes several polytypes such as hexagonal (hBN), Bernal (bBN), and rhombohedral (rBN) BN. The latter two are non-centrosymmetric, potentially leadin
Externí odkaz:
https://doaj.org/article/f162df4fb221428a8d4f08b6bb9c69ad
Publikováno v:
Communications Physics, Vol 7, Iss 1, Pp 1-6 (2024)
Abstract Defect-related spin-to-photon interfaces in silicon promise the realization of quantum repeaters by combining advanced semiconductor and photonics technologies. Recently, controlled creation/erasure of simple carbon interstitial defects have
Externí odkaz:
https://doaj.org/article/2da87374781f4cb7b344724ae7e6b84f
Autor:
Rohit Babar, Gergely Barcza, Anton Pershin, Hyoju Park, Oscar Bulancea Lindvall, Gergő Thiering, Örs Legeza, Jamie H. Warner, Igor A. Abrikosov, Adam Gali, Viktor Ivády
Publikováno v:
npj Computational Materials, Vol 10, Iss 1, Pp 1-9 (2024)
Abstract Point defect qubits in semiconductors have demonstrated their outstanding capabilities for high spatial resolution sensing generating broad multidisciplinary interest. Hexagonal boron nitride (hBN) hosting point defect qubits have recently o
Externí odkaz:
https://doaj.org/article/52cafc4b34d04b9fabd93afa7a69da86
Publikováno v:
npj 2D Materials and Applications, Vol 8, Iss 1, Pp 1-8 (2024)
Abstract Van der Waals structures present a unique opportunity for tailoring material interfaces and integrating photonic functionalities. By precisely manipulating the twist angle and stacking sequences, it is possible to elegantly tune and function
Externí odkaz:
https://doaj.org/article/483a6fc9c9144f0d821f3fab52844945
Autor:
Péter Udvarhelyi, Tristan Clua-Provost, Alrik Durand, Jiahan Li, James H. Edgar, Bernard Gil, Guillaume Cassabois, Vincent Jacques, Adam Gali
Publikováno v:
npj Computational Materials, Vol 9, Iss 1, Pp 1-8 (2023)
Abstract The boron-vacancy spin defect ( $${\,{{\mbox{V}}}}_{{{\mbox{B}}}\,}^{-}$$ V B − ) in hexagonal boron nitride (hBN) has a great potential as a quantum sensor in a two-dimensional material that can directly probe various external perturbatio
Externí odkaz:
https://doaj.org/article/bf99938d466046a0a98c8522184e0ec8
Autor:
Nai-Jie Guo, Song Li, Wei Liu, Yuan-Ze Yang, Xiao-Dong Zeng, Shang Yu, Yu Meng, Zhi-Peng Li, Zhao-An Wang, Lin-Ke Xie, Rong-Chun Ge, Jun-Feng Wang, Qiang Li, Jin-Shi Xu, Yi-Tao Wang, Jian-Shun Tang, Adam Gali, Chuan-Feng Li, Guang-Can Guo
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-8 (2023)
Abstract Hexagonal boron nitride (hBN) is a remarkable two-dimensional (2D) material that hosts solid-state spins and has great potential to be used in quantum information applications, including quantum networks. However, in this application, both t
Externí odkaz:
https://doaj.org/article/c7e3748bb09b4ca784c31b10fb278698
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-6 (2023)
Computational search for defect centers in semiconductors typically assumes that the defects realize the most thermodynamically stable configuration. Here the authors demonstrate, for a complex defect in silicon, that this is not always the case if t
Externí odkaz:
https://doaj.org/article/1f59ffa641894ff4a609df67144ae515
Publikováno v:
npj Computational Materials, Vol 8, Iss 1, Pp 1-6 (2022)
Abstract Fluorescent centres in silicon have recently attracted great interest, owing to their remarkable properties for quantum technology. Here, we demonstrate that the C-centre in silicon can realise an optically readable quantum register in the L
Externí odkaz:
https://doaj.org/article/9fd08e5687eb42eaa60167bd792d15e1
Autor:
Wei Liu, Viktor Ivády, Zhi-Peng Li, Yuan-Ze Yang, Shang Yu, Yu Meng, Zhao-An Wang, Nai-Jie Guo, Fei-Fei Yan, Qiang Li, Jun-Feng Wang, Jin-Shi Xu, Xiao Liu, Zong-Quan Zhou, Yang Dong, Xiang-Dong Chen, Fang-Wen Sun, Yi-Tao Wang, Jian-Shun Tang, Adam Gali, Chuan-Feng Li, Guang-Can Guo
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-8 (2022)
Abstract Hexagonal boron nitride (hBN) has recently been demonstrated to contain optically polarized and detected electron spins that can be utilized for implementing qubits and quantum sensors in nanolayered-devices. Understanding the coherent dynam
Externí odkaz:
https://doaj.org/article/a4a48a4ac058412abe4bc5fe5bcd4b2d
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-7 (2022)
Recent work has demonstrated controlled fabrication of single carbon defect spins in the two-dimensional material WS2. Here, the authors use ab initio methods to determine the electronic and optical properties of this defect, establishing it as a via
Externí odkaz:
https://doaj.org/article/0be407c017034d5bbb7929721d931343