Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Adam Elwailly"'
Publikováno v:
IEEE Transactions on Electron Devices. 68:2289-2294
Radiation hardness of FinFET and stacked nanowire (NW) static random-access memory (SRAM), with ${L} _{\text {G}} =20$ nm, which corresponds to high-density 5 nm technology node, is studied and compared using 3-D technology computer-aided design (TCA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa406b46cce7539467be6dd4d055711d
https://doi.org/10.1109/ted.2021.3067855
https://doi.org/10.1109/ted.2021.3067855
Publikováno v:
ECS Journal of Solid State Science and Technology. 11:115001
In this paper, the short circuit ruggedness of Gallium Oxide (Ga2O3) vertical FinFET is studied using Technology Computer-Aided-Design (TCAD) simulations. Ga2O3 is an emerging ultra-wide bandgap material and Ga2O3 vertical FinFET can achieve the norm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b7349f24156d06fd7db897247c46dad
https://doi.org/10.1149/2162-8777/ac9e73
https://doi.org/10.1149/2162-8777/ac9e73
Publikováno v:
2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).
For the first time, we systematically study the design space of vertical Ga2O 3 junctionless FinFET for 600V to 5kV ratings using TCAD simulation with experimentally calibrated parameters. Two scenarios are investigated, namely with “excellent” a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::185d1ec12fff70133477c0ab53228d0a
https://doi.org/10.1109/wipdaasia49671.2020.9360255
https://doi.org/10.1109/wipdaasia49671.2020.9360255