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Utilizing an α,β-Unsaturated Dicarboxylic Acid for a Defect Initiated Residue Removal During Cu post-Chemical Mechanical Planarization Cleaning

Autor: Tatiana Cahue, Abigail L. Dudek, Jason Keleher, Adam Caridi, Kiana Cahue

Publikováno v: ECS Journal of Solid State Science and Technology. 11:123006

The development of post-Chemical Mechanical Planarization (p-CMP) cleaning processes is critical for the continued miniaturization of Integrated Circuit (IC) and logic device architecture. In order for further extension of Moore’s Law the minimizat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4cadbbdc6c36da4fca5acc8569701b94
https://doi.org/10.1149/2162-8777/aca932

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