Zobrazeno 1 - 10
of 171
pro vyhledávání: '"Adam Barcz"'
Publikováno v:
Canadian Respiratory Journal, Vol 2018 (2018)
The administration of aerosolized medication is a basic therapy for patients with numerous respiratory tract diseases, including obstructive airway diseases (OADs), cystic fibrosis (CF), and infectious airway diseases. The management and care for pat
Externí odkaz:
https://doaj.org/article/55236de2785c46569afbbd001653a277
The role of fluorine-containing ultra-thin layer in controlling boron thermal diffusion into silicon
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 3 (2023)
We have investigated the influence of silicon dioxide reactive ion etching (RIE) parameters on the composition of the polymer layer that is formed during this process on top of the etched layer, and finally, the role of this layer in high- temperatur
Externí odkaz:
https://doaj.org/article/9a7256964546406fbcbdc77b7af7f072
Publikováno v:
Surface and Interface Analysis. 52:71-75
Autor:
K. Gołaszewska-Malec, Artur Trajnerowicz, Andrzej Taube, Elżbieta Dynowska, Karolina Pągowska, Adam Barcz, Renata Kruszka, Rafal Jakiela, Michal Kozubal
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 450:248-251
In this work, the Si+ doping of undoped GaN (n ∼1 × 1016 cm−3) on sapphire by a single step implantation or sequential implantation/recrystallization processes, to a total fluence of 1 × 1016 at/cm2 and subsequent activation annealing at 1100
Autor:
Renata Kruszka, Maciej Kozubal, Adam Barcz, Anna Szerling, Marek Guziewicz, Kamil Kosiel, Karolina Pągowska, Marcin Myśliwiec, Rafal Jakiela
Publikováno v:
Materials Science in Semiconductor Processing. 74:88-97
Ion implantation can be applied to form the electrical isolation in AlGaAs/GaAs Quantum Cascade Laser (QCL) instead of mesa etching. In this paper, we present in detail the designing of hydrogen implant isolation scheme, alongside with its verificati
Autor:
M. Amilusik, Grzegorz Kamler, Michal Bockowski, M. Fijalkowski, Aneta Sidor, Adam Barcz, Rafal Jakiela, Marek Oklej, M. Iwinska, Boleslaw Lucznik, Tomasz Sochacki
Publikováno v:
Gallium Nitride Materials and Devices XIV.
HVPE can be used for growing thin, up to 200 µm, GaN layers of high purity and low free carrier concentration. Deposition of such material on conductive n-type GaN seeds results in a structure which is the basis of some vertically operating electron
Publikováno v:
Ultramicroscopy. 204
The ion-irradiation damage effects in semiconductors were directly visualized by means of scanning electron microscopy at low beam acceleration voltages (low-kV SEM). The Al0.55Ga0.45As (p-type and n-type) epitaxial layers grown over GaAs substrates
Publikováno v:
Advances in Respiratory Medicine, Vol 92, Iss 2, Pp 156-157 (2024)
Advances in Respiratory Medicine, which has been published by MDPI since 2022, serves as a platform for hosting pneumological studies [...]
Externí odkaz:
https://doaj.org/article/85917d1096454efa9e3e4a3a15afd26a
Autor:
Yevgen Melikhov, J. Z. Domagala, Kamil Sobczak, Maciej Sawicki, Adam Barcz, N. V. Gavrilov, R. Minikaev, Elżbieta Dynowska, R. Ratajczak, Iraida N. Demchenko, Mateusz Walczak, Maryna Chernyshova, Y. Syryanyy
Publikováno v:
Journal of Alloys and Compounds. 846:156433
The structural, electronic, and magnetic properties of low-energy rhenium implanted c-Si are examined for the first time. The damage created by rhenium ions and the following partial reconstruction of the silicon host matrix after rapid thermal annea
Autor:
Tomasz Sochacki, Kacper Sierakowski, Michal Bockowski, M. Fijalkowski, M. Iwinska, Adam Barcz, Rafal Jakiela
Publikováno v:
Physica B: Condensed Matter. 594:412316
Diffusion mechanism of beryllium in gallium nitride was investigated by analyzing temperature-dependent diffusion profiles from an infinite source. Beryllium atoms were implanted into a high structural quality gallium nitride layer crystallized by ha