Zobrazeno 1 - 10
of 180
pro vyhledávání: '"Adam Barcz"'
The role of fluorine-containing ultra-thin layer in controlling boron thermal diffusion into silicon
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 3 (2023)
We have investigated the influence of silicon dioxide reactive ion etching (RIE) parameters on the composition of the polymer layer that is formed during this process on top of the etched layer, and finally, the role of this layer in high- temperatur
Externí odkaz:
https://doaj.org/article/9a7256964546406fbcbdc77b7af7f072
Publikováno v:
Surface and Interface Analysis. 52:71-75
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce9fc7435f4cdb0f4e2332a4fac75b31
https://doi.org/10.1002/sia.6705
https://doi.org/10.1002/sia.6705
Autor:
K. Gołaszewska-Malec, Artur Trajnerowicz, Andrzej Taube, Elżbieta Dynowska, Karolina Pągowska, Adam Barcz, Renata Kruszka, Rafal Jakiela, Michal Kozubal
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 450:248-251
In this work, the Si+ doping of undoped GaN (n ∼1 × 1016 cm−3) on sapphire by a single step implantation or sequential implantation/recrystallization processes, to a total fluence of 1 × 1016 at/cm2 and subsequent activation annealing at 1100
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a51141072bb0060fb2c957ef9a5f143
https://doi.org/10.1016/j.nimb.2018.03.028
https://doi.org/10.1016/j.nimb.2018.03.028
Autor:
Renata Kruszka, Maciej Kozubal, Adam Barcz, Anna Szerling, Marek Guziewicz, Kamil Kosiel, Karolina Pągowska, Marcin Myśliwiec, Rafal Jakiela
Publikováno v:
Materials Science in Semiconductor Processing. 74:88-97
Ion implantation can be applied to form the electrical isolation in AlGaAs/GaAs Quantum Cascade Laser (QCL) instead of mesa etching. In this paper, we present in detail the designing of hydrogen implant isolation scheme, alongside with its verificati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3060d2f820c00b09a927cd5835632e30
https://doi.org/10.1016/j.mssp.2017.10.016
https://doi.org/10.1016/j.mssp.2017.10.016
Autor:
M. Amilusik, Grzegorz Kamler, Michal Bockowski, M. Fijalkowski, Aneta Sidor, Adam Barcz, Rafal Jakiela, Marek Oklej, M. Iwinska, Boleslaw Lucznik, Tomasz Sochacki
Publikováno v:
Gallium Nitride Materials and Devices XIV.
HVPE can be used for growing thin, up to 200 µm, GaN layers of high purity and low free carrier concentration. Deposition of such material on conductive n-type GaN seeds results in a structure which is the basis of some vertically operating electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7d86b5cb31c5b5e3aa94e327ca50c9f
https://doi.org/10.1117/12.2507526
https://doi.org/10.1117/12.2507526
Autor:
Yevgen Melikhov, J. Z. Domagala, Kamil Sobczak, Maciej Sawicki, Adam Barcz, N. V. Gavrilov, R. Minikaev, Elżbieta Dynowska, R. Ratajczak, Iraida N. Demchenko, Mateusz Walczak, Maryna Chernyshova, Y. Syryanyy
Publikováno v:
Journal of Alloys and Compounds. 846:156433
The structural, electronic, and magnetic properties of low-energy rhenium implanted c-Si are examined for the first time. The damage created by rhenium ions and the following partial reconstruction of the silicon host matrix after rapid thermal annea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a57acb6cefba75c24f9d0c7b370cc491
https://doi.org/10.1016/j.jallcom.2020.156433
https://doi.org/10.1016/j.jallcom.2020.156433
Publikováno v:
ECS Journal of Solid State Science and Technology. 6:P415-P417
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2cfb8ab6d317ec1ea075be3fb8814354
https://doi.org/10.1149/2.0191707jss
https://doi.org/10.1149/2.0191707jss
Autor:
Tomasz Sochacki, Kacper Sierakowski, Michal Bockowski, M. Fijalkowski, M. Iwinska, Adam Barcz, Rafal Jakiela
Publikováno v:
Physica B: Condensed Matter. 594:412316
Diffusion mechanism of beryllium in gallium nitride was investigated by analyzing temperature-dependent diffusion profiles from an infinite source. Beryllium atoms were implanted into a high structural quality gallium nitride layer crystallized by ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d61d5c3c89193603fd7183bccc708c2a
https://doi.org/10.1016/j.physb.2020.412316
https://doi.org/10.1016/j.physb.2020.412316
Publikováno v:
Ultramicroscopy. 204
The ion-irradiation damage effects in semiconductors were directly visualized by means of scanning electron microscopy at low beam acceleration voltages (low-kV SEM). The Al0.55Ga0.45As (p-type and n-type) epitaxial layers grown over GaAs substrates
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2870e779e6a6707045fe980a05ee6243
https://pubmed.ncbi.nlm.nih.gov/31108365
https://pubmed.ncbi.nlm.nih.gov/31108365
The control over the structural homogeneity is of paramount importance for ternary nitride compounds - the second most important semiconducting material-class after Si, due to its unrivalled applicability in optoelectronics, and high power/high frequ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4305826db299c7552cd200f448b23100
http://arxiv.org/abs/1809.03247
http://arxiv.org/abs/1809.03247
