A New Approach for Sensitive Characterization of Semiconductor Laser Beams Using Metal-Semiconductor Thermocouples

Autor: Anna Katarzyna Piotrowska, Adam Łaszcz, Michał Zaborowski, Artur Broda, Dariusz Szmigiel

Publikováno v: Sensors, Vol 22, Iss 23, p 9324 (2022)

This paper presents the results of beam investigations on semiconductor IR lasers using novel detectors based on thermocouples. The work covers the design, the fabrication of detectors, and the experimental validation of their sensitivity to IR radia

Externí odkaz: https://doaj.org/article/62b0d9eae26144c8b18a2f763b3eba95

Terahertz Time-Domain Spectroscopy of Graphene Nanoflakes Embedded in Polymer Matrix

Autor: Anton Koroliov, Genyu Chen, Kenneth M. Goodfellow, A. Nick Vamivakas, Zygmunt Staniszewski, Peter Sobolewski, Mirosława El Fray, Adam Łaszcz, Andrzej Czerwinski, Christiaan P. Richter, Roman Sobolewski

Publikováno v: Applied Sciences, Vol 9, Iss 3, p 391 (2019)

The terahertz time-domain spectroscopy (THz-TDS) technique has been used to obtain transmission THz-radiation spectra of polymer nanocomposites containing a controlled amount of exfoliated graphene. Graphene nanocomposites (1 wt%) that were used in t

Externí odkaz: https://doaj.org/article/b7c03b64102a45fab8d7ff991f152ffa

Microscopy of Semiconducting Materials 2003

Autor: Alexey Kolmakov, Emanuele Pelucchi, Michael Fay, LUCIA NASI, Maria Varela, Rafael García Roja, Dmitry Lobanov, Helge Weman, Ferdinand Hofer, Rafal Dunin-Borkowski, Markus Weyers, Joel Eymery, Gazi Aliev, Marina Gutiérrez Peinado, Hitoshi Tampo, Eric Tournié, Douglas Paul, Slawomir Kret, Federico Corni, Graziella Malandrino, Paul Midgley, PEDRO L. GALINDO, Cécile Hébert, Alexander Vasiliev, Adalberto Balzarotti, Ana Sanchez, Grzegorz Jurczak, Ondrej Klimo, Wsevolod Lundin, Matthew Weyland, Thomas Walther, Sandra Van Aert, Dmitri Nikolichev, Lothar Houben, Sascha Sadewasser, Viacheslav Golovanov, Adam Łaszcz, Ian Watson, Srinivasan Anand, Vittorio Morandi, Alessandra Catellani, Paul Munroe, Lydia Laffont, Ursel Bangert, Nicolas Grandjean, Jennifer Gray, Annika Lohstroh, Paul Sellin, Andreu Cabot, Jie Zhang, Ernesto Placidi, Evgenii Zavarin, Jacek Ratajczak, Richard Beanland, Mohammed Benaissa, Dmitri GOLBERG, Michael Stöger-Pollach, Paul Harrison, Monica Bollani, Alexey Novikov, Gilles Patriarche, Vadim Sirotkin, Meilin Liu, Miriam Herrera Collado, Sergey Rubanov, Adam Wojcik, ANNA SGARLATA, Arnold Den Dekker, Thomas Dekorsy, André Vantomme, George Cirlin, Jerzy KĄTCKI, Daniel Hill, Masanori Mitome, Xavier Aymerich, Sergio I. Molina, Paweł Dłużewski, Roberta grazia Toro, Souren Grigorian, Klaus Leifer, Mark Aindow, Jean-Michel Chauveau, Giuseppe Nicotra, Martin Albrecht, Corrado Bongiorno, Jiří Limpouch, Hele Savin

Publikováno v: A. G. Cullis, P. A. Midgley. CRC Press, 4 p., 2018, 9781351074636. ⟨10.1201/9781351074636⟩

International audience; In Accumulated Low Schottky Barrier metal oxide semiconductor field effect transistors (MOSFET) on SOl structures, very thin silicide layers are used for ohmic contacts. Silicide contacts form due to metallurgical reaction of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::301d0be2daf17c1032417a5026374bfe
https://hal.science/hal-03555261

Study of Silicon Nanoparticles Formation in Silicon Nitride

Autor: Adam Łaszcz, Mariusz Płuska, Tadeusz Piotrowski, Jacek Ratajczak, Krzysztof Hejduk, Andrzej Czerwiński, M. Lipiński

Publikováno v: Solid State Phenomena. 186:66-69

We present results of the study on the silicon nanoparticles formation in multilayer silicon nitride structures. These structures consist of pairs of stoichiometric silicon nitride dielectric layers (SiNx) and silicon rich nitride layers (SRN). Silic

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::aaa1567c62d0fdccc9e5063652e4d2ad
https://doi.org/10.4028/www.scientific.net/ssp.186.66

Superconducting and ferromagnetic properties of NbN/NiCu and NbTiN/NiCu bilayer nanostructures for photon detection

Autor: A. Klimov, W. Slysz, Andrzej Czerwiński, Renata Kruszka, R. Puźniak, Roman Sobolewski, M. Juchniewicz, M. Wegrzecki, Marek Guziewicz, Adam Łaszcz, Michał A. Borysiewicz, Raivo Stern, E. Joon, Wolfgang Lang, Bernd Aichner

Publikováno v: SPIE Proceedings.

Performance of superconducting single-photon detectors based on resistive hotspot formation in nanostripes upon optical photon absorption depends strongly on the critical current density J C of the fabricated nanostructure. Utilization of an ultrathi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::edcdfd684572f813683517e2aae6c7fb
https://doi.org/10.1117/12.2179697