Zobrazeno 1 - 10
of 168
pro vyhledávání: '"Adalberto Balzarotti"'
Publikováno v:
Surface Science. 696:121591
Using high-resolution scanning tunneling microscopy, we investigate the periodicity of mixed arrays of single and triple steps and the atomic structure of triple steps on three vicinal Si(111) samples with off-angles 1.5 ∘ ≤ θ ≤ 9.45 ∘ towar
Autor:
Alexey Kolmakov, Emanuele Pelucchi, Michael Fay, LUCIA NASI, Maria Varela, Rafael García Roja, Dmitry Lobanov, Helge Weman, Ferdinand Hofer, Rafal Dunin-Borkowski, Markus Weyers, Joel Eymery, Gazi Aliev, Marina Gutiérrez Peinado, Hitoshi Tampo, Eric Tournié, Douglas Paul, Slawomir Kret, Federico Corni, Graziella Malandrino, Paul Midgley, PEDRO L. GALINDO, Cécile Hébert, Alexander Vasiliev, Adalberto Balzarotti, Ana Sanchez, Grzegorz Jurczak, Ondrej Klimo, Wsevolod Lundin, Matthew Weyland, Thomas Walther, Sandra Van Aert, Dmitri Nikolichev, Lothar Houben, Sascha Sadewasser, Viacheslav Golovanov, Adam Łaszcz, Ian Watson, Srinivasan Anand, Vittorio Morandi, Alessandra Catellani, Paul Munroe, Lydia Laffont, Ursel Bangert, Nicolas Grandjean, Jennifer Gray, Annika Lohstroh, Paul Sellin, Andreu Cabot, Jie Zhang, Ernesto Placidi, Evgenii Zavarin, Jacek Ratajczak, Richard Beanland, Mohammed Benaissa, Dmitri GOLBERG, Michael Stöger-Pollach, Paul Harrison, Monica Bollani, Alexey Novikov, Gilles Patriarche, Vadim Sirotkin, Meilin Liu, Miriam Herrera Collado, Sergey Rubanov, Adam Wojcik, ANNA SGARLATA, Arnold Den Dekker, Thomas Dekorsy, André Vantomme, George Cirlin, Jerzy KĄTCKI, Daniel Hill, Masanori Mitome, Xavier Aymerich, Sergio I. Molina, Paweł Dłużewski, Roberta grazia Toro, Souren Grigorian, Klaus Leifer, Mark Aindow, Jean-Michel Chauveau, Giuseppe Nicotra, Martin Albrecht, Corrado Bongiorno, Jiří Limpouch, Hele Savin
Publikováno v:
A. G. Cullis, P. A. Midgley. CRC Press, 4 p., 2018, 9781351074636. ⟨10.1201/9781351074636⟩
International audience; In Accumulated Low Schottky Barrier metal oxide semiconductor field effect transistors (MOSFET) on SOl structures, very thin silicide layers are used for ohmic contacts. Silicide contacts form due to metallurgical reaction of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::301d0be2daf17c1032417a5026374bfe
https://hal.science/hal-03555261
https://hal.science/hal-03555261
Autor:
Maurizia Palummo, Luca Persichetti, Adalberto Balzarotti, Conor Hogan, Claudio Goletti, Laura Fazi, Anna Sgarlata
Publikováno v:
physica status solidi (b). 252:87-94
We have applied reflectance anisotropy spectroscopy (RAS) to investigate the rebonded-step (RS) reconstructed strained Ge/Si(105) surface. RAS spectra display a marked peak at 2.1 eV that is completely cancelled after exposure to about 1200 L of mole
Autor:
Anna Sgarlata, Isabelle Berbezier, Adalberto Balzarotti, Holger Vach, Fatme Jardali, Maurizio De Crescenzi, Luca Persichetti
Publikováno v:
Journal of Physical Chemistry Letters
Journal of Physical Chemistry Letters, American Chemical Society, 2016, 7 (16), pp.3246-3251. ⟨10.1021/acs.jpclett.6b01284⟩
Journal of Physical Chemistry Letters, 2016, 7 (16), pp.3246-3251. ⟨10.1021/acs.jpclett.6b01284⟩
Journal of Physical Chemistry Letters, American Chemical Society, 2016, 7 (16), pp.3246-3251. ⟨10.1021/acs.jpclett.6b01284⟩
Journal of Physical Chemistry Letters, 2016, 7 (16), pp.3246-3251. ⟨10.1021/acs.jpclett.6b01284⟩
International audience; We fabricated flat, two-dimensional germanium sheets showing a honeycomb lattice that matches that of germanene by depositing submonolayers of Ge on graphite at room temperature and subsequent annealing to 350 degrees C. Scann
Autor:
Adalberto Balzarotti, F. Patella, A. Filabozzi, Massimo Fanfoni, Ernesto Placidi, Fabrizio Arciprete
Publikováno v:
Physics Letter A
380 (2016): 516–519. doi:10.1016/j.physleta.2015.11.008
info:cnr-pdr/source/autori:Fanfoni, M.; Filabozzi, A.; Placidi, E.; Patella, F.; Balzarotti, A.; Arciprete, F./titolo:2D Voronoi tessellation generated by lines and belts of dots/doi:10.1016%2Fj.physleta.2015.11.008/rivista:Physics Letter A (Print)/anno:2016/pagina_da:516/pagina_a:519/intervallo_pagine:516–519/volume:380
380 (2016): 516–519. doi:10.1016/j.physleta.2015.11.008
info:cnr-pdr/source/autori:Fanfoni, M.; Filabozzi, A.; Placidi, E.; Patella, F.; Balzarotti, A.; Arciprete, F./titolo:2D Voronoi tessellation generated by lines and belts of dots/doi:10.1016%2Fj.physleta.2015.11.008/rivista:Physics Letter A (Print)/anno:2016/pagina_da:516/pagina_a:519/intervallo_pagine:516–519/volume:380
The application of the Voronoi tessellation for studying the nucleation process at the basis of thin film formation dates back to the end of nineties. In particular, Poissonian and spatial correlated nuclei distributions were investigated. The growth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::edfe5b8eb588b22892e17779e241a342
http://hdl.handle.net/11573/1325963
http://hdl.handle.net/11573/1325963
Autor:
Adalberto Balzarotti, Federica Valentini, Anna Sgarlata, Luca Persichetti, Giuseppe Palleschi
Publikováno v:
Fullerenes, Nanotubes and Carbon Nanostructures. 21:302-310
A few layers of functionalized graphene (FLG) have been obtained by the oxidative unzipping reaction of single-walled carbon nanotubes. A detailed Scanning Tunneling Microscopy and Transmission Electron Microscopy study shows that several different m
Autor:
Andrea Capasso, Massimo Fanfoni, Anna Sgarlata, Luca Persichetti, Adalberto Balzarotti, Nunzio Motta, Simon Ruffell
Publikováno v:
Thin Solid Films. 519:4207-4211
Spatial organization of Ge islands, grown by physical vapor deposition, on prepatterned Si(001) substrates has been investigated. The substrates were patterned prior to Ge deposition by nanoindentation. Characterization of Ge dots is performed by ato
Autor:
Adalberto Balzarotti, Conor Hogan, Paolo Moras, Anna Sgarlata, Luca Persichetti, Massimo Fanfoni, Laura Fazi, Polina M. Sheverdyaeva
Publikováno v:
Journal of physics. Condensed matter
30 (2018): 465502. doi:10.1088/1361-648X/aae66f
info:cnr-pdr/source/autori:Sheverdyaeva, P. M.; Hogan, C.; Sgarlata, A.; Fazi, L.; Fanfoni, M.; Persichetti, L.; Moras, P.; Balzarotti, A./titolo:Electronic structure of the Ge%2FSi(105) hetero-interface: an ARPES and DFT study/doi:10.1088%2F1361-648X%2Faae66f/rivista:Journal of physics. Condensed matter (Print)/anno:2018/pagina_da:465502/pagina_a:/intervallo_pagine:465502/volume:30
30 (2018): 465502. doi:10.1088/1361-648X/aae66f
info:cnr-pdr/source/autori:Sheverdyaeva, P. M.; Hogan, C.; Sgarlata, A.; Fazi, L.; Fanfoni, M.; Persichetti, L.; Moras, P.; Balzarotti, A./titolo:Electronic structure of the Ge%2FSi(105) hetero-interface: an ARPES and DFT study/doi:10.1088%2F1361-648X%2Faae66f/rivista:Journal of physics. Condensed matter (Print)/anno:2018/pagina_da:465502/pagina_a:/intervallo_pagine:465502/volume:30
We present a joint experimental and theoretical study of the electronic properties of the rebonded-step reconstructed Ge/Si(1 0 5) surface which is the main strained face found on Ge/Si(0 0 1) quantum dots and is considered a prototypical model syste
Publikováno v:
Atomi, Molecole e Solidi ISBN: 9788847057012
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a0f0380abdb20402f3ac069ded276f9
https://doi.org/10.1007/978-88-470-5702-9_1
https://doi.org/10.1007/978-88-470-5702-9_1
Publikováno v:
Atomi, Molecole e Solidi ISBN: 9788847057012
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d71a326923a933227eb5cd48e988ad6
https://doi.org/10.1007/978-88-470-5702-9_4
https://doi.org/10.1007/978-88-470-5702-9_4