Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Ad Lammers"'
Autor:
Ad Lammers, Shih-En Tseng, Chris Progler, Henry Kamberian, Alek C. Chen, Yohan Choi, Michael Green, Tsann-Bim Chiou, Young Ham, Junji Miyazaki
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2017.
As nodes progress into the 7nm and below regime, extreme ultraviolet lithography (EUVL) becomes critical for all industry participants interested in remaining at the leading edge. One key cost driver for EUV in the supply chain is the reflective EUV
Black border, mask 3D effects: covering challenges of EUV mask architecture for 22nm node and beyond
Autor:
Ramasubramanian Kottumakulal Jaganatharaja, Jun Kotani, Dorothe Oorschot, Cheuk-Wah Man, Guido Schiffelers, Joep van Dijk, Yutaka Kodera, Haiko Rolff, Robert de Kruif, Ad Lammers, Eelco van Setten, Hiroaki Morimoto, Shinpei Kondo, Brid Connolly, Albrecht Ullrich, Tomohiro Imoto, Norihito Fukugami, Yo Sakata, Natalia Davydova
Publikováno v:
SPIE Proceedings.
Photomask is at the heart of a lithographic scanner’s optical path. It cannot be left non-optimized from the imaging point of view. In this work we provide new insights on two critical aspects of EUV mask architecture: optimization of absorber for
Autor:
Haiko Rolff, Jun Kotani, Brid Connolly, Norihito Fukugami, Tomohiro Imoto, Shinpei Kondo, Robert de Kruif, Albrecht Ullrich, Hiroaki Morimoto, Yutaka Kodera, Yo Sakata, Ad Lammers, Natalia Davydova, Guido Schiffelers, Eelco van Setten, Joep van Dijk
Publikováno v:
SPIE Proceedings.
The impact of various mask parameters on CDU combined in a total mask budget is presented, for 22 nm lines, for reticles used for NXE:3300 qualification. Apart from the standard mask CD measurements, actinic spectrometry of multilayer is used to qual
Autor:
Ad Lammers, Dorothe Oorschot, Eelco van Setten, Brid Connolly, Norihito Fukugami, Robert de Kruif, Yutaka Kodera, Natalia Davydova, Haiko Rolff
Publikováno v:
SPIE Proceedings.
EUV lithography performance is improved significantly by optimizing and fine-tuning of the EUV mask. The EUV mask is an active element of the scanner optical system influencing main lithographic figure of merits such as image contrast, critical dimen
Autor:
Ad Lammers, John Zimmerman, Robert de Kruif, Norihito Fukugami, Eelco van Setten, Shinpei Kondo, Brid Connolly, Vicky Philipsen, Natalia Davydova, Vidya Vaenkatesan, Noreen Harned
Publikováno v:
SPIE Proceedings.
There are multiple mask parameters that can be tuned to optimize the lithographic performance of the EUV photo mask[1]. One of them is the absorber height. A reduction of the absorber height allows, for example, a higher resolution patterning on mask
Autor:
Anton van Oosten, Noreen Harned, Wei Liu, Mark van de Kerkhof, Mircea Dusa, Jiong Jiang, Youri van Dommelen, Natalia Davydova, Hua-yu Liu, Frank A. J. M. Driessen, John Zimmerman, Hoyoung Kang, Robert de Kruif, Eelco van Setten, Sang-In Han, Brid Connolly, Dorothe Oorschot, Ad Lammers
Publikováno v:
SPIE Proceedings.
EUVL requires the use of reflective optics including a reflective mask. The mask consists of an absorber layer pattern on top of a reflecting multilayer, tuned for 13.53 nm. The EUVL mask is a complex optical element with many parameters contributing
Publikováno v:
Historical Archaeology; Sep2022, Vol. 56 Issue 3, p417-432, 16p
Publikováno v:
Proceedings of SPIE; 8/23/2018, Vol. 10807, p1-8, 8p
A richly illustrated collection of never-before-seen writings and drawings from the notebooks, portfolios, and personal papers of C. G. Jung's wife and collaboratorEmma Jung (1882–1955) was the life and work partner of one of the great intellectual