Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Achim Schramm"'
Publikováno v:
EDFA Technical Articles. 8:6-14
This article demonstrates the strengths and limitations of electrical testing for locating defects that contribute to contact failures in DRAMs. It presents three case studies, the first of which involves a write problem to a pair of cells that share
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32cdc52c000c057f18f52ad15e3802e9
https://doi.org/10.31399/asm.edfa.2006-1.p006
https://doi.org/10.31399/asm.edfa.2006-1.p006
Publikováno v:
EDFA Technical Articles. 7:14-19
Weak open contacts are common in DRAM cell arrays where they act as a resistance between the cell capacitor and wordline transistor. This article discusses the role of weak open contacts in DRAM failures, the factors that influence their effect on re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26d6f34dad55965f2bbc9a5e73d44cee
https://doi.org/10.31399/asm.edfa.2005-2.p014
https://doi.org/10.31399/asm.edfa.2005-2.p014
Publikováno v:
International Symposium for Testing and Failure Analysis.
Soft defect localization (SDL) is a method of laser scanning microscopy that utilizes the changing pass/fail behavior of an integrated circuit under test and temperature influence. Historically the pass and fail states are evaluated by a tester that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8affe49220d51d4c14df2ce300dceb06
https://doi.org/10.31399/asm.cp.istfa2008p0227
https://doi.org/10.31399/asm.cp.istfa2008p0227
Publikováno v:
DATE
Soft defect localization (SDL) is a method of laser scanning microscopy that utilizes the changing pass/fail behavior of an integrated circuit under test and temperature influence. Historically the pass and fail states are evaluated by a tester that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dfc59e0514da1707d9e4c4f4c151bcf2
https://doi.org/10.1145/1403375.1403563
https://doi.org/10.1145/1403375.1403563
Publikováno v:
International Symposium for Testing and Failure Analysis.
A single cell failure (SCF) is a common fail signature in dynamic random access memories (DRAMs). Generally write and read problems can be observed if a cell capacitor is not connected properly to its bitline. If the critical resistance of this conne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ef334d44076edc3c9df95dcbfacc99b
https://doi.org/10.31399/asm.cp.istfa2004p0576
https://doi.org/10.31399/asm.cp.istfa2004p0576