Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Achim Dörnen"'
Publikováno v:
Journal of Applied Physics. 93:951-956
Two types of forbidden transitions are identified in In1−xGaxAs/InP undoped quantum wells (QWs) with compressive strain by low-temperature (1.8 K) magneto-optical absorption. One of them is due to the interband transitions with different principal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7522120be524481df687138b000e1645
https://doi.org/10.1063/1.1527709
https://doi.org/10.1063/1.1527709
Publikováno v:
Semiconductor Science and Technology. 17:1213-1217
Low-temperature photoluminescence (PL) and optical absorption are carried out on a Ti-doped ZnTe bulk crystal with carefully optimized experimental conditions. The influence of excitation energy in the PL is checked. Two zero-phonon lines (ZPLs) are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bdfdc98f384e6e925dafa2b375dbad52
https://doi.org/10.1088/0268-1242/17/12/302
https://doi.org/10.1088/0268-1242/17/12/302
Tensile strained InGaAs/InP multiple-quantum-well structures studied by magneto-optical spectroscopy
Publikováno v:
Journal of Applied Physics. 87:4303-4307
Low-temperature (1.8 K) magneto-optical absorption experiments have been performed on two tensile strained In1−xGaxAs/InP multiple-quantum-well samples. By using derivative spectra and the effective-mass equation of a quasi-two-dimensional exciton,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a41500883b8d0ef67d8face0c796fb1b
https://doi.org/10.1063/1.373069
https://doi.org/10.1063/1.373069
Publikováno v:
Journal of Crystal Growth. :8-12
GaInN layers play a key role in short wavelength optoelectronic devices for the visible spectrum. However, the epitaxial growth of In containing nitrides is more problematic than that of GaN and AlGaN. This requires a detailed understanding of the gr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea9061fd123f94213004db0e35a2aec2
https://doi.org/10.1016/s0022-0248(98)00146-8
https://doi.org/10.1016/s0022-0248(98)00146-8
Autor:
F. Adler, Heinz Schweizer, F. Scholz, A. Bauknecht, P. Ernst, M. Geiger, D. Haase, Achim Dörnen
Publikováno v:
Journal of Applied Physics. 83:1631-1636
The energy structure and the carrier relaxation in self-assembled InAs/GaAs quantum dots (SADs) is investigated by photoluminescence excitation spectroscopy (PLE) and photoluminescence (PL) at resonant excitation (below the GaAs and the wetting layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::469b659d70817afd6ea9fef22a960c28
https://doi.org/10.1063/1.366876
https://doi.org/10.1063/1.366876
Publikováno v:
Materials Science Forum. :1093-1098
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7256f7c0dc0f00c71c95cf9da72f27e0
https://doi.org/10.4028/www.scientific.net/msf.258-263.1093
https://doi.org/10.4028/www.scientific.net/msf.258-263.1093
Publikováno v:
Materials Science Forum. :697-702
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::adbdfb0b95f7e7a09eb516795321722a
https://doi.org/10.4028/www.scientific.net/msf.258-263.697
https://doi.org/10.4028/www.scientific.net/msf.258-263.697
Publikováno v:
Materials Science Forum. :707-712
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f37a190c74c8f8e2840979475b7f2029
https://doi.org/10.4028/www.scientific.net/msf.196-201.707
https://doi.org/10.4028/www.scientific.net/msf.196-201.707
Publikováno v:
Journal of Applied Physics. 91:2553-2555
Low-temperature (1.8 K) magneto-optical reflectivity spectroscopy together with derivative operation has been employed in evaluating the reduced effective mass and exciton binding energy in GaxIn1−xP/AlGaInP quantum wells (QWs). Low uncertainty of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e546ae704bf1239e23a4b780ee76043
https://doi.org/10.1063/1.1436553
https://doi.org/10.1063/1.1436553
Publikováno v:
Materials Science Forum. :797-802
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e244ebe3d02ee4c4254dc9465a5ee0e
https://doi.org/10.4028/www.scientific.net/msf.143-147.797
https://doi.org/10.4028/www.scientific.net/msf.143-147.797