Zobrazeno 1 - 10
of 44
pro vyhledávání: '"Acharya, Sudip"'
Autor:
Zhou, Jie, Vincent, Daniel, Acharya, Sudip, Ojo, Solomon, Abrand, Alireza, Liu, Yang, Gong, Jiarui, Liu, Dong, Haessly, Samuel, Shen, Jianping, Xu, Shining, Li, Yiran, Lu, Yi, Stanchu, Hryhorii, Mawst, Luke, Claflin, Bruce, Mohseni, Parsian K., Ma, Zhenqiang, Yu, Shui-Qing
Group IV GeSn double-heterostructure (DHS) lasers offer unique advantages of a direct bandgap and CMOS compatibility. However, further improvements in laser performance have been bottlenecked by limited junction properties of GeSn through conventiona
Externí odkaz:
http://arxiv.org/abs/2409.09752
Autor:
Liu, Yang, Gong, Jiarui, Acharya, Sudip, Lia, Yiran, Abrand, Alireza, Rudie, Justin M., Zhou, Jie, Lu, Yi, Abbasi, Haris Naeem, Vincent, Daniel, Haessly, Samuel, Tsai, Tsung-Han, Mohseni, Parsian K., Yu, Shui-Qing, Ma, Zhenqiang
GeSn-based SWIR lasers featuring imaging, sensing, and communications has gained dynamic development recently. However, the existing SiGeSn/GeSn double heterostructure lacks adequate electron confinement and is insufficient for room temperature lasin
Externí odkaz:
http://arxiv.org/abs/2408.16884
Autor:
Liu, Yang, Li, Yiran, Acharya, Sudip, Zhou, Jie, Gong, Jiarui, Abrand, Alireza, Lu, Yi, Vincent, Daniel, Haessly, Samuel, Mohseni, Parsian K., Yu, Shui-Qing, Ma, Zhenqiang
This study presents the fabrication and characterizations of an Al$_{0.3}$Ga$_{0.7}$As/Ge$_{0.87}$Sn$_{0.13}$/GeSn p-i-n double heterostructure (DHS) diode following the grafting approach for enhanced optoelectronic applications. By integrating ultra
Externí odkaz:
http://arxiv.org/abs/2408.08451
Autor:
Acharya, Sudip, Stanchu, Hryhorii, Kumar, Rajesh, Ojo, Solomon, Benamara, Mourad, Chang, Guo-En, Li, Baohua, Du, Wei, Yu, Shui-Qing
Owing to its true direct bandgap and tunable bandgap energies,GeSn alloys are increasingly attractive as gain media for mid-IR lasers that can be monolithically integrated on Si. Demonstrations of optically pumped GeSn laser at room under pulsed cond
Externí odkaz:
http://arxiv.org/abs/2405.10163
Autor:
Acharya, Sudip, Strobel, Paul, Prochnow, Maximilian, Taut, Steffen, Zech, Michael, Schwalb, Antje, Zech, Roland
Publikováno v:
In Quaternary Science Advances September 2024 15
Autor:
Acharya, Sudip
Group IV elements based nanoelectronics devices (mainly Si and Ge based devices) have been developed and improved over a long period of time and are the most influencing materials of semiconductor electronics, but due to their indirect bandgap their
Autor:
Prochnow, Maximilian, Dulias, Katharina, Strobel, Paul, Bliedtner, Marcel, Daut, Gerhard, Szidat, Sönke, Salazar, Gary, Lechleitner, Franziska, Acharya, Sudip, Martínez-Abarca, Rodrigo, Schwarz, Anja, Schwalb, Antje, Zech, Roland
Publikováno v:
In Quaternary Science Reviews 1 December 2024 345
Autor:
Acharya, Sudip, Pandey, Krishna, Basnet, Rabindra, Acharya, Gokul, Nabi, Md Rafique Un, Wang, Jian, Hu, Jin
Publikováno v:
In Journal of Alloys and Compounds 15 December 2023 968
Autor:
Acharya, Sudip, Zech, Roland, Strobel, Paul, Bliedtner, Marcel, Prochnow, Maximilian, De Jonge, Cindy
Publikováno v:
In Organic Geochemistry December 2023 186
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