Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Accillaro, C."'
Autor:
Loglio, G., Cidronali, A., Accillaro, C., Usai, M., Magrini, I., Camprini, M., Collodi, G., Manes, G.
Publikováno v:
Loglio, G. ; Cidronali, A. ; Accillaro, C. ; Usai, M. ; Magrini, I. ; Camprini, M. ; Collodi, G. ; Manes, G. (2004) On the experimental calculation of the conversion matrix for sub-harmonic mixer. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
This paper introduces experimental observations and theoretical considerations on a newly introduced technique allowing to measure the admittance conversion matrix of microwave device, by large-signal vectorial measurements. In particular, it discuss
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::977181137c9df9c6b61da74caf2b410f
http://amsacta.unibo.it/1063/
http://amsacta.unibo.it/1063/
Autor:
Camprini, M., Cidronali, A., Accillaro, C., Magrini, I., Loglio, G., Collodi, G., Jargon, J., Manes, G.
Publikováno v:
Camprini, M. ; Cidronali, A. ; Accillaro, C. ; Magrini, I. ; Loglio, G. ; Collodi, G. ; Jargon, J. ; Manes, G. (2004) Identification of a Strongly Nonlinear Device Compact Model Based on Vectorial Large Signal Measurements. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
This paper deals with the identification of equivalent circuit models for strongly nonlinear devices by taking advantage of the so-called “Vectorial Large-Signal Measurements”. A very specific device, the Heterojunction Interband Tunneling FET (H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6260cc7e77b19c5e7aac19737dd239a2
Autor:
Accillaro, C., Cidronali, A., Zani, F., Loglio, G., Usai, M., Collodi, G., Camprini, M., Magrini, I., Manes, G.
Publikováno v:
Accillaro, C. ; Cidronali, A. ; Zani, F. ; Loglio, G. ; Usai, M. ; Collodi, G. ; Camprini, M. ; Magrini, I. ; Manes, G. (2004) Thermal Memory Effects on the Linearity of a GaAs PHEMT. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
This paper presents a comprehensive treatment of the nonlinear electro-thermal memory effect arising in a GaAs PHEMT. In particular is demonstrated the way with which the pure nonlinear electrical effect and the electro-thermal one combine and in tur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a8bb203dc4ea46bf3476a662702394a1
http://amsacta.unibo.it/1062/
http://amsacta.unibo.it/1062/
Autor:
Cidronali, A., Collodi, G., Accillaro, C., Toccafondi, C., Vannini, Giorgio, Santarelli, A., Manes, G.
Publikováno v:
Cidronali, A. ; Collodi, G. ; Accillaro, C. ; Toccafondi, C. ; Vannini, G. ; Santarelli, A. ; Manes, G. (2003) A Scalable PHEMT Model Taking Into Account Electromagnetic and Electro-Thermal Effects. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
The paper proposes an approach to model a P-HEMT taking into account for the electrical-thermal- electromagnetic behavior in an effective way.The model is based on the integration of a distributed approach,which considers an intrinsic device for gate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::032252fa2127949a9a1559aebe95a928
Publikováno v:
2009 IEEE MTT-S International Microwave Symposium Digest; 2009, p737-740, 4p
Akademický článek
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Publikováno v:
IEEE MTT-S International Microwave Symposium Digest, 2005; 2005, p4-4, 1p
Conference
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Conference
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