Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Acar Berkman"'
Publikováno v:
ECS Transactions. 61:337-341
InGaN/GaN light emitting diode (LED) structures with different GaN barrier growth temperatures have been grown by metalorganic chemical vapor deposition (MOCVD). Atomic Force Microscopy (AFM)-Conductive AFM (CAFM) analysis has been performed to study
Publikováno v:
ECS Transactions. 3:423-427
Spin based electronics is an emerging field where the spin of electrons in addition to the charge of electrons is manipulated and different functionalities in devices are achieved. Developments of new materials, that are ferromagnetic at room tempera
Autor:
M. J. Reed, Acar Berkman, Phillip Barletta, Salah M. Bedair, Ahmed M. Emara, Nadia A. El-Masry, Baxter Moody
Publikováno v:
ECS Transactions. 3:315-321
In recent years, InGaN-based LED's emitting in the blue and green spectral regions have emerged into widespread use. However, due to fundamental material issues, achieving yellow and red emission from InGaN-based structures has presented a unique cha
Autor:
Philip T. Barletta, Salah M. Bedair, Ahmed M. Emara, Baxter Moody, M. J. Reed, E. Acar Berkman, Nadia A. El-Masry
Publikováno v:
Applied Physics Letters. 90:151109
The authors present optical and electrical data for long wavelength (573–601nm) InGaN∕GaN multiple quantum well light emitting diodes (LEDs) grown by metal organic chemical vapor deposition. These results are achieved by optimizing the active lay
Publikováno v:
ECS Meeting Abstracts. :1315-1315
not Available.
Publikováno v:
ECS Meeting Abstracts. :1707-1707
not Available.
Autor:
Barletta, Philip T., Acar Berkman, E., Moody, Baxter F., El-Masry, Nadia A., Emara, Ahmed M., Reed, Mason J., Bedair, S. M.
Publikováno v:
Applied Physics Letters; 4/9/2007, Vol. 90 Issue 15, p151109-1, 3p, 3 Graphs