Zobrazeno 1 - 10
of 43
pro vyhledávání: '"Abu Riduan Md Foisal"'
Autor:
Thanh Nguyen, Toan Dinh, Abu Riduan Md Foisal, Hoang-Phuong Phan, Tuan-Khoa Nguyen, Nam-Trung Nguyen, Dzung Viet Dao
Publikováno v:
Nature Communications, Vol 10, Iss 1, Pp 1-8 (2019)
Designing reliable and sensitive mechanical sensing technologies based on piezoresistive effect remains a challenge. Here, the authors propose an opto-electro-mechanical coupling strategy to enable giant piezoresistive effect in a highly doped 3C-SiC
Externí odkaz:
https://doaj.org/article/3de7b0a7204d45adbcdfce282ae719d1
Autor:
Tuan-Hung Nguyen, Abu Riduan Md Foisal, Tuan Anh Pham, Trung-Hieu Vu, Hong-Quan Nguyen, Erik W. Streed, Jarred Fastier-Wooller, Pablo Guzman Duran, Philip Tanner, Van Thanh Dau, Nam-Trung Nguyen, Dzung Viet Dao
Publikováno v:
IEEE Sensors Journal. 23:2063-2069
Autor:
Hong-Quan Nguyen, Abu Riduan Md Foisal, Philip Tanner, Tuan-Hung Nguyen, Sadegh Aberoumand, Van Thanh Dau, Toan Dinh, Sima Dimitrijev, Hoang-Phuong Phan, Nam-Trung Nguyen, Dzung Viet Dao
Publikováno v:
ACS Applied Electronic Materials. 4:2648-2655
Autor:
Tuan-Hung Nguyen, Thanh Nguyen, Abu Riduan Md Foisal, Tuan Anh Pham, Toan Dinh, Hong-Quan Nguyen, Erik W. Streed, Trung-Hieu Vu, Jarred Fastier-Wooller, Pablo Guzman Duran, Van Thanh Dau, Nam-Trung Nguyen, Dzung Viet Dao
Publikováno v:
ACS Applied Electronic Materials. 4:768-775
Autor:
Dzung Viet Dao, Nam-Trung Nguyen, Philip Tanner, Toan Dinh, Thanh Viet Nguyen, Abu Riduan Md Foisal, Hong-Quan Nguyen, Erik Streed, Van Thanh Dau, Trung-Hieu Vu, Tuan-Hung Nguyen
Publikováno v:
ACS Applied Materials & Interfaces. 13:55329-55338
It is critical to investigate the charge carrier gradient generation in semiconductor junctions with an asymmetric configuration, which can open a new platform for developing lateral photovoltaic and self-powered devices. This paper reports the gener
Autor:
Tuan-Khoa Nguyen, Dzung Viet Dao, Nam-Trung Nguyen, Toan Dinh, Abu Riduan Md Foisal, Thanh Viet Nguyen, Tuan Anh Pham, Pablo Guzman, Hung Nguyen, Hoang-Phuong Phan, Van Thanh Dau
Publikováno v:
ACS Applied Materials & Interfaces. 13:35046-35053
Giant piezoresistive effect enables the development of ultrasensitive sensing devices to address the increasing demands from hi-tech applications such as space exploration and self-driving cars. The discovery of the giant piezoresistive effect by opt
Autor:
Toan Dinh, Hoang-Phuong Phan, Tuan-Khoa Nguyen, Dzung Viet Dao, Nam-Trung Nguyen, Thanh Viet Nguyen, Abu Riduan Md Foisal
Publikováno v:
Journal of Materials Chemistry C. 8:4713-4721
The discovery of a giant piezoresistive effect in a semiconductor heterojunction by optoelectronic coupling can open a new era for mechanical sensors. This paper develops a novel concept of opto-electronic coupling in semiconductor heterojunctions fo
Autor:
Dzung Viet Dao, Thanh Viet Nguyen, Nam-Trung Nguyen, Toan Dinh, Vivekananthan Balakrishnan, Abu Riduan Md Foisal, Hoang-Phuong Phan
Publikováno v:
IEEE Sensors Journal. 19:11784-11790
There is an increasing demand for measuring respiratory rate (RR) to monitor the progression of clinical events such as cardiac arrest or during the admission to the intensive care unit (ICU). Current methods of respiration monitoring are complex, in
Autor:
Dzung Viet Dao, Tuan-Khoa Nguyen, Toan Dinh, Philip Tanner, Abu Riduan Md Foisal, Erik Streed, Thanh Tai Nguyen
Publikováno v:
ACS Applied Materials & Interfaces. 11:40980-40987
Single-crystalline silicon carbide (3C-SiC) on the Si substrate has drawn significant attention in recent years due to its low wafer cost and excellent mechanical, chemical, and optoelectronic properties. However, the applications of the structure ha
Autor:
Thanh Nguyen, Toan Dinh, Van Thanh Dau, Abu Riduan Md Foisal, Hung Nguyen, Hieu Vu, Tuan Anh Pham, Canh-Dung Tran, Tuan-Khoa Nguyen, Hoang-Phuong Phan, Nam-Trung Nguyen, Dzung Viet Dao
Publikováno v:
2021 IEEE Sensors.