Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Abu Jafar Rasel"'
Autor:
Melonie P Thomas, Ryan Schoell, Md Abu Jafar Rasel, Md Hafijur Rahman, Winson Kuo, John Watt, Stephen House, Khalid Hattar, William Windes, Aman Haque
Publikováno v:
Materials Research Express, Vol 11, Iss 4, p 045601 (2024)
The combined effects of high-temperature and heavy-ion irradiation on Mrozowski cracks (MC) and nuclear graphite crystallographic dimensions have been studied using in situ heating and in situ ion-irradiation in the transmission electron microscope (
Externí odkaz:
https://doaj.org/article/7fa1fb22d910442fbc79385c3b85eb11
Autor:
Shu-Min Hsu, Chaker Fares, Xinyi Xia, Md Abu Jafar Rasel, Jacob Ketter, Samira Esteves Afonso Camargo, Md Amanul Haque, Fan Ren, Josephine F. Esquivel-Upshaw
Publikováno v:
Journal of Functional Biomaterials, Vol 12, Iss 3, p 52 (2021)
Peri-implantitis leads to implant failure and decreases long-term survival and success rates of implant-supported prostheses. The pathogenesis of this disease is complex but implant corrosion is believed to be one of the many factors which contribute
Externí odkaz:
https://doaj.org/article/84a6dfce09364e4aa1950b840f8348e9
Autor:
Md Abu Jafar Rasel, Nahid Sultan Al-Mamun, Sergei Stepanoff, Aman Haque, Douglas E. Wolfe, Fan Ren, Stephen J. Pearton
Publikováno v:
Applied Physics Letters. 122
In this work, we demonstrate the rejuvenation of Ti/4H-SiC Schottky barrier diodes after forward current-induced degradation, at room temperature and in a few seconds, by exploiting the physics of high-energy electron interactions with defects. The d
Autor:
Ani Khachatrian, Amanul Haque, Zahabul Islam, Abu Jafar Rasel, Jihyun Kim, Fan Ren, Adrian Ildefonso, Stephen J. Pearton, Minghan Xian
Publikováno v:
ECS Transactions. 104:13-34
Publikováno v:
Journal of Materials Research. 36:3398-3406
Two-dimensional transition metal carbides and nitrides, known as MXenes, are layered materials with unique functionalities which make them suitable for applications such as energy storage devices, supercapacitors, electromagnetic interference shieldi
Autor:
Benjamin C. Letson, John W. Conklin, Peter Wass, Simon Barke, Guido Mueller, Md Abu Jafar Rasel, Aman Haque, Stephen J. Pearton, Fan Ren
Publikováno v:
ECS Journal of Solid State Science and Technology. 12:066002
There are numerous applications for deep UV AlGaN Light-Emitting Diodes (LEDs) in virus inactivation, air and water purification, sterilization, bioagent detection and UV polymer curing. The long-term stability of these LEDs is also of interest for l
Autor:
Md Abu Jafar Rasel, Ryan Schoell, Nahid Sultan Al-Mamun, Khalid Hattar, C Thomas Harris, Aman Haque, Douglas E Wolfe, Fan Ren, Stephen J Pearton
Publikováno v:
Journal of Physics D: Applied Physics. 56:305104
While radiation is known to degrade AlGaN/GaN high-electron-mobility transistors (HEMTs), the question remains on the extent of damage governed by the presence of an electrical field in the device. In this study, we induced displacement damage in HEM
Autor:
Joseph P. Feser, David B. Mitzi, Abu Jafar Rasel, Jinghang Dai, Tianyang Li, Hao Ma, Alessandro Mattoni, Brad Ramshaw, Ahmet Alatas, Malcolm G. Thomas, Zachary W. Rouse, Avi Shragai, Zhiting Tian, Shefford P. Baker, Chen Li
Publikováno v:
Nano Letters. 21:3708-3714
Two-dimensional (2D) hybrid organic-inorganic perovskites consisting of alternating organic and inorganic layers are a new class of layered structures. They have attracted increasing interest for photovoltaic, optoelectronic, and thermoelectric appli
Autor:
Xinyi Xia, Minghan Xian, Jian-Sian Li, Fan Ren, Jinho Bae, Jihyun Kim, Md Abu Jafar Rasel, Aman Haque, Stephen J. Pearton
Publikováno v:
SoutheastCon 2022.
Autor:
Md Abu Jafar Rasel, Sergei Stepanoff, Aman Haque, Douglas E. Wolfe, Fan Ren, Stephen J. Pearton
Publikováno v:
Journal of Vacuum Science & Technology B. 40:063204
Radiation damage in electronic devices is known to be influenced by physics, design, and materials system. Here, we report the effects of biasing state (such as ON and OFF) and pre-existing damage in GaN high electron mobility transistors exposed to