Zobrazeno 1 - 10
of 337
pro vyhledávání: '"Abstreiter, Gerhard"'
Autor:
Erhard, Nadine, Zenger, Stefan, Morkötter, Stefanie, Rudolph, Daniel, Weiss, Matthias, Krenner, Hubert J., Karl, Helmut, Abstreiter, Gerhard, Finley, Jonathan J., Koblmüller, Gregor, Holleitner, Alexander W.
We investigate the ultrafast optoelectronic properties of single Al0.3Ga0.7As/GaAs-core-shell-nanowires. The nanowires contain GaAs-based quantum wells. For a resonant excitation of the quantum wells, we find a picosecond photocurrent which is consis
Externí odkaz:
http://arxiv.org/abs/1511.04962
Autor:
Brenneis, Andreas, Overbeck, Jan, Treu, Julian, Hertenberger, Simon, Morkötter, Stefanie, Döblinger, Markus, Finley, Jonathan J., Abstreiter, Gerhard, Koblmüller, Gregor, Holleitner, Alexander W.
We investigate the optoelectronic properties of single indium arsenide nanowires, which are grown vertically on p-doped silicon substrates. We apply a scanning photocurrent microscopy to study the optoelectronic properties of the single heterojunctio
Externí odkaz:
http://arxiv.org/abs/1510.01143
Autor:
Erhard, Nadine, Seifert, Paul, Prechtel, Leonhard, Hertenberger, Simon, Karl, Helmut, Abstreiter, Gerhard, Koblmuller, Gregor, Holleitner, Alexander W.
To clarify the ultrafast temporal interplay of the different photocurrent mechanisms occurring in single InAs-nanowire-based circuits, an on-chip photocurrent pump-probe spectroscopy based on coplanar striplines was utilized. The data are interpreted
Externí odkaz:
http://arxiv.org/abs/1502.03782
Autor:
Weiß, Matthias, Kinzel, Jörg B., Schülein, Florian J. R., Heigl, Michael, Rudolph, Daniel, Morkötter, Stefanie, Döblinger, Markus, Bichler, Max, Abstreiter, Gerhard, Finley, Jonathan J., Koblmüller, Gregor, Wixforth, Achim, Krenner, Hubert J.
Publikováno v:
Nano Letters 14, 2256 (2014)
We probe and control the optical properties of emission centers forming in radial het- erostructure GaAs-Al0.3Ga0.7As nanowires and show that these emitters, located in Al0.3Ga0.7As layers, can exhibit quantum-dot like characteristics. We employ a ra
Externí odkaz:
http://arxiv.org/abs/1410.2048
Autor:
Kinzel, Jörg B., Rudolph, Daniel, Bichler, Max, Abstreiter, Gerhard, Finley, Jonathan J., Koblmüller, Gregor, Wixforth, Achim, Krenner, Hubert J.
Publikováno v:
Nano Letters 11, 1512-1517 (2011)
We report on optical experiments performed on individual GaAs nanowires and the ma- nipulation of their temporal emission characteristics using a surface acoustic wave. We find a pronounced, characteristic suppression of the emission intensity for th
Externí odkaz:
http://arxiv.org/abs/1410.2027
Autor:
Ardelt, Per-Lennart, Hanschke, Lukas, Fischer, Kevin A., Müller, Kai, Kleinkauf, Alexander, Koller, Manuel, Bechtold, Alexander, Simmet, Tobias, Wierzbowski, Jakob, Riedl, Hubert, Abstreiter, Gerhard, Finley, Jonathan. J.
Publikováno v:
Phys.Rev.B 90, 241404(R) (2014)
Pulsed resonant fluorescence is used to probe ultrafast phonon-assisted exciton and biexciton preparation in individual self-assembled InGaAs quantum dots. By driving the system using large area ($\geq10\pi$) near resonant optical pulses, we experime
Externí odkaz:
http://arxiv.org/abs/1409.6014
Autor:
Moriya, Rai, Sawano, Kentarou, Hoshi, Yusuke, Masubuchi, Satoru, Shiraki, Yasuhiro, Wild, Andreas, Neumann, Christian, Abstreiter, Gerhard, Bougeard, Dominique, Koga, Takaaki, Machida, Tomoki
The spin-orbit interaction (SOI) of the two-dimensional hole gas in the inversion symmetric semiconductor Ge is studied in a strained-Ge/SiGe quantum well structure. We observed weak anti-localization (WAL) in the magnetoconductivity measurement, rev
Externí odkaz:
http://arxiv.org/abs/1408.1148
Autor:
Weiß, Matthias, Schülein, Florian J. R., Kinzel, Jörg B., Heigl, Michael, Rudolph, Daniel, Bichler, Max, Abstreiter, Gerhard, Finley, Jonathan J., Wixforth, Achim, Koblmüller, Gregor, Krenner, Hubert J.
Publikováno v:
J. Phys. D: Appl. Phys. 47, 394011 (2014)
The excitonic occupancy state of a single, nanowire-based, heterostructure quantum dot is dynamically programmed by a surface acoustic wave. The quantum dot is formed by an interface or thickness fluctuation of a GaAs QW embedded in a AlGaAs shell of
Externí odkaz:
http://arxiv.org/abs/1404.3103
Fluctuation induced luminescence sidebands in the emission spectra of resonantly driven quantum dots
Autor:
Laussy, Fabrice P., Jovanov, Vase, del Valle, Elena, Bechtold, Alexander, Kapfinger, Stephan, Müller, Kai, Koch, Sebastian, Laucht, Arne, Eissfeller, Thomas, Bichler, Max, Abstreiter, Gerhard, Finley, Jonathan J.
We describe how complex fluctuations of the local environment of an optically active quantum dot can leave rich fingerprints in its emission spectrum. A new feature, termed "Fluctuation Induced Luminescence" (FIL), is observed to arise from extremely
Externí odkaz:
http://arxiv.org/abs/1207.6952
Autor:
Wild, Andreas, Kierig, Johannes, Sailer, Jürgen, Ager III, Joel, Haller, Eugene, Abstreiter, Gerhard, Ludwig, Stefan, Bougeard, Dominique
Publikováno v:
Applied Physics Letters 100, 143110 (2012)
We present a few electron double quantum dot (QD) device defined in an isotopically purified $^{28}$Si quantum well (QW). An electron mobility of $5.5 \cdot 10^4 cm^2(Vs)^{-1}$ is observed in the QW which is the highest mobility ever reported for a 2
Externí odkaz:
http://arxiv.org/abs/1202.3237