Magnetoresistance anisotropy of ultrathin epitaxial La0.83Sr0.17MnO3 films.

Autor: Balevičius, Saulius, Tornau, Evaldas E., Žurauskienė, Nerija, Stankevič, Voitech, Šimkevičius, Česlovas, Tolvaišienė, Sonata, Plaušinaitienė, Valentina, Abrutis, Adulfas

Publikováno v: Journal of Applied Physics; 12/7/2017, Vol. 122 Issue 21, p1-9, 9p

Synthesis and characterisation of Hf(thd) 2X 2 derivatives [X = N(SiMe 3) 2, OSiMe 3 and OSi tBuMe 2] as precursors for MOCVD of hafnium silicate films

Autor: Hubert-Pfalzgraf, Liliane G., Touati, Nadia, Pasko, Sergej V., Vaissermann, J., Abrutis, Adulfas

Publikováno v: In Polyhedron 2005 24(18):3066-3073

Synthesis and molecular structures of cobalt(II) β-diketonate complexes as new MOCVD precursors for cobalt oxide films

Autor: Pasko, Sergej, Hubert-Pfalzgraf, Liliane G., Abrutis, Adulfas, Vaissermann, Jacqueline

Publikováno v: In Polyhedron 2004 23(5):735-741

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Influence of plasma treatments and SnO2 alloying on the conductive properties of epitaxial Ga2O3 films deposited on C-sapphire by chemical vapor deposition

Autor: Maertens, Alban, Margueron, Samuel, Genty, Frédéric, Abrutis, Adulfas, Belmonte, Thierry, Boulet, Pascal, Ghanbaja, Jaafar, Talbi, Abdelkrim, Bartasyte, Ausrine

Publikováno v: Compound Semicondcutor Week 2016
Compound Semicondcutor Week 2016, Jun 2016, Toyama, Japan
Compound Semicondcutor Week 2016, Jun 2016, Toyama, Japan.

International audience; Ga2O3 thin films, alloyed with SnO2, ranging from 0 to 15 at% of Sn in composition, were grown by hot wire chemical vapor deposition on C-oriented sapphire. No conductivity was measured on the as-grown or annealed at 1000 °C

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::6307561c68a19ae5c2af191774255574
https://hal.archives-ouvertes.fr/hal-01341006