Zobrazeno 1 - 10
of 231
pro vyhledávání: '"Abrosimov, Nikolay"'
Autor:
Tröger, Jan, Kersting, Reinhard, Hagenhoff, Birgit, Bougeard, Dominique, Abrosimov, Nikolay V., Klos, Jan, Schreiber, Lars R., Bracht, Hartmut
The continuous technological development of electronic devices and the introduction of new materials leads to ever greater demands on the fabrication of semiconductor heterostructures and their characterization. This work focuses on optimizing Time-o
Externí odkaz:
http://arxiv.org/abs/2407.17985
Autor:
Klos, Jan, Tröger, Jan, Keutgen, Jens, Losert, Merritt P., Riemann, Helge, Abrosimov, Nikolay V., Knoch, Joachim, Bracht, Hartmut, Coppersmith, Susan N., Friesen, Mark, Cojocaru-Mirédin, Oana, Schreiber, Lars R., Bougeard, Dominique
Publikováno v:
Adv. Sci. 2407442 (2024)
Understanding crystal characteristics down to the atomistic level increasingly emerges as a crucial insight for creating solid state platforms for qubits with reproducible and homogeneous properties. Here, isotope composition depth profiles in a SiGe
Externí odkaz:
http://arxiv.org/abs/2405.19974
Autor:
Cifuentes, Jesus D., Tanttu, Tuomo, Steinacker, Paul, Serrano, Santiago, Hansen, Ingvild, Slack-Smith, James P., Gilbert, Will, Huang, Jonathan Y., Vahapoglu, Ensar, Leon, Ross C. C., Stuyck, Nard Dumoulin, Itoh, Kohei, Abrosimov, Nikolay, Pohl, Hans-Joachim, Thewalt, Michael, Laucht, Arne, Yang, Chih Hwan, Escott, Christopher C., Hudson, Fay E., Lim, Wee Han, Rahman, Rajib, Dzurak, Andrew S., Saraiva, Andre
Quantum processors based on integrated nanoscale silicon spin qubits are a promising platform for highly scalable quantum computation. Current CMOS spin qubit processors consist of dense gate arrays to define the quantum dots, making them susceptible
Externí odkaz:
http://arxiv.org/abs/2309.01849
Autor:
Huang, Jonathan Y., Su, Rocky Y., Lim, Wee Han, Feng, MengKe, van Straaten, Barnaby, Severin, Brandon, Gilbert, Will, Stuyck, Nard Dumoulin, Tanttu, Tuomo, Serrano, Santiago, Cifuentes, Jesus D., Hansen, Ingvild, Seedhouse, Amanda E., Vahapoglu, Ensar, Abrosimov, Nikolay V., Pohl, Hans-Joachim, Thewalt, Michael L. W., Hudson, Fay E., Escott, Christopher C., Ares, Natalia, Bartlett, Stephen D., Morello, Andrea, Saraiva, Andre, Laucht, Arne, Dzurak, Andrew S., Yang, Chih Hwan
Publikováno v:
Nature 627, 772-777 (2024)
The encoding of qubits in semiconductor spin carriers has been recognised as a promising approach to a commercial quantum computer that can be lithographically produced and integrated at scale. However, the operation of the large number of qubits req
Externí odkaz:
http://arxiv.org/abs/2308.02111
Autor:
Berkman, Ian R., Lyasota, Alexey, de Boo, Gabriele G., Bartholomew, John G., Lim, Shao Q., Johnson, Brett C., McCallum, Jeffrey C., Xu, Bin-Bin, Xie, Shouyi, Abrosimov, Nikolay V., Pohl, Hans-Joachim, Ahlefeldt, Rose L., Sellars, Matthew J., Yin, Chunming, Rogge, Sven
Spins in silicon that are accessible via a telecom-compatible optical transition are a versatile platform for quantum information processing that can leverage the well-established silicon nanofabrication industry. Key to these applications are long c
Externí odkaz:
http://arxiv.org/abs/2307.10021
Autor:
Serrano, Santiago, Feng, MengKe, Lim, Wee Han, Seedhouse, Amanda E., Tanttu, Tuomo, Gilbert, Will, Escott, Christopher C., Abrosimov, Nikolay V., Pohl, Hans-Joachim, Thewalt, Michael L. W., Hudson, Fay E., Saraiva, Andre, Dzurak, Andrew S., Laucht, Arne
Publikováno v:
PRX QUANTUM 5, 010301 (2024)
High fidelity qubit readout is critical in order to obtain the thresholds needed to implement quantum error correction protocols and achieve fault-tolerant quantum computing. Large-scale silicon qubit devices will have densely-packed arrays of quantu
Externí odkaz:
http://arxiv.org/abs/2307.07724
Autor:
Cifuentes, Jesús D., Tanttu, Tuomo, Gilbert, Will, Huang, Jonathan Y., Vahapoglu, Ensar, Leon, Ross C. C., Serrano, Santiago, Otter, Dennis, Dunmore, Daniel, Mai, Philip Y., Schlattner, Frédéric, Feng, MengKe, Itoh, Kohei, Abrosimov, Nikolay, Pohl, Hans-Joachim, Thewalt, Michael, Laucht, Arne, Yang, Chih Hwan, Escott, Christopher C., Lim, Wee Han, Hudson, Fay E., Rahman, Rajib, Dzurak, Andrew S., Saraiva, Andre
Publikováno v:
Nat Commun 15, 4299 (2024)
Spins of electrons in CMOS quantum dots combine exquisite quantum properties and scalable fabrication. In the age of quantum technology, however, the metrics that crowned Si/SiO2 as the microelectronics standard need to be reassessed with respect to
Externí odkaz:
http://arxiv.org/abs/2303.14864
Autor:
Tanttu, Tuomo, Lim, Wee Han, Huang, Jonathan Y., Stuyck, Nard Dumoulin, Gilbert, Will, Su, Rocky Y., Feng, MengKe, Cifuentes, Jesus D., Seedhouse, Amanda E., Seritan, Stefan K., Ostrove, Corey I., Rudinger, Kenneth M., Leon, Ross C. C., Huang, Wister, Escott, Christopher C., Itoh, Kohei M., Abrosimov, Nikolay V., Pohl, Hans-Joachim, Thewalt, Michael L. W., Hudson, Fay E., Blume-Kohout, Robin, Bartlett, Stephen D., Morello, Andrea, Laucht, Arne, Yang, Chih Hwan, Saraiva, Andre, Dzurak, Andrew S.
Publikováno v:
Nat. Phys. 6 (2024)
Achieving high-fidelity entangling operations between qubits consistently is essential for the performance of multi-qubit systems and is a crucial factor in achieving fault-tolerant quantum processors. Solid-state platforms are particularly exposed t
Externí odkaz:
http://arxiv.org/abs/2303.04090
Autor:
Meng, Fanqi, Walla, Frederik, Kovalev, Sergey, Deinert, Jan-Christoph, Ilyakov, Igor, Chen, Min, Ponomaryov, Alexey, Pavlov, Sergey G., Hubers, Heinz-Wilhelm, Abrosimov, Nikolay V., Jungemann, Christoph, Roskos, Hartmut G., Thomson, Mark D.
We investigate ultrafast harmonic generation (HG) in Si:B, driven by intense pump pulses with fields reaching ~100 kV/cm and a carrier frequency of 300 GHz, at 4 K and 300 K, both experimentally and theoretically. We report several novel findings con
Externí odkaz:
http://arxiv.org/abs/2303.01564
Autor:
Emtsev, Vadim, Abrosimov, Nikolay, Kozlovski, Vitalii, Lastovskii, Stanislav, Oganesyan, Gagik, Poloskin, Dmitrii
Publikováno v:
Journal of Applied Physics; 9/14/2024, Vol. 136 Issue 10, p1-7, 7p
