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pro vyhledávání: '"Abramof, Eduardo G."'
Autor:
Abramof, Eduardo G., Silva, Antonio Ferreira da, Sernelius, Bo E., Souza, Joel Pereira de, Boudinov, Henri Ivanov
Publikováno v:
Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
The Hall effect and resistivity of Si:Bi with donor concentration varying from 3.0X1017 to 1.4X1020 cm-3 were measured from room temperature down to 13 K. The samples were prepared by Bi1 implantation in Van der Pauw structures delineated in Si chips
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3056::fc791e92fe8aee6ec6fa97fd1eee2a70
