Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Abraham Yoo"'
Autor:
Wendong Lu, Zhengyong Zhu, Kaifei Chen, Menggan Liu, Bok-Moon Kang, Xinlv Duan, Jiebin Niu, Fuxi Liao, Wang Dan, Xie-Shuai Wu, Joohwan Son, De-Yuan Xiao, Gui-Lei Wang, Abraham Yoo, Kan-Yu Cao, Di Geng, Nianduan Lu, Guanhua Yang, Chao Zhao, Ling Li, Ming Liu
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Autor:
Hong-Gang Liang, Yong Yu, De-Yuan Xiao, Jing-Fei Zhu, Jing Liang, Lan-Song Ba, Ji-Bin Leng, Zheng-Yong Zhu, Yong-Jie Li, Xing-Song Su, Kobe Weng, Li Bai, Yan-Zhe Tang, Hong-Bo Sun, Gui-Lei Wang, Hong-Wen Li, Wei-Feng Xu, Bryan Kang, Abraham Yoo, Kan-Yu Cao, Chao Zhao
Publikováno v:
2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT).
Autor:
Yu Yong, Jing Liang, Nan Yang, De-Yuan Xiao, Jian-Peng Jiang, Jing-Rui Guo, Ling-Fei Wang, Di Geng, Lan-Song Ba, Hong-Gang Liang, Ya-Nan Lu, Dan Wang, Yu-Ke Li, Xiao-Ming Yin, Long Huang, Jiang-Liu Shi, Gui-Lei Wang, Yan-Zhe Tang, Hong-Wen Li, Bryan Kang, Abraham Yoo, Kan-Yu Cao, Ling Li, Chao Zhao
Publikováno v:
2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT).
Autor:
Zheng-Yong Zhu, Bok-Moon Kang, Wang Dan, Xie-Shuai Wu, Joohwan Son, Yong Yu, De-Yuan Xiao, Jin Dai, Gui-Lei Wang, Abraham Yoo, Kan-Yu Cao, Chao Zhao
Publikováno v:
2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT).
Autor:
Wen-Qi Wang, Xiang Liu, Yong Yu, De-Yuan Xiao, Lan-Song Ba, Hong-Gang Liang, Jing Liang, Jong-Sung Jeon, Xing-Song Su, Qing-Hua Han, Jing-Fei Zhu, Jing-Heng Meng, Jin Dai, Hong-Bo Sun, Gui-Lei Wang, Yan-Zhe Tang, Hong-Wen Li, Wei-Feng Xu, Bryan Kang, Abraham Yoo, Kan-Yu Cao, Chao Zhao
Publikováno v:
2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT).
Publikováno v:
2022 China Semiconductor Technology International Conference (CSTIC).
Publikováno v:
2010 International Electron Devices Meeting.
A novel lateral super-junction power FINFET (SJ-FINFET) structure suitable for integration is presented to address the challenges associated with sub-100V applications. The proposed lateral SJ-FINFET structure is compatible with advanced SOI-CMOS and
Autor:
Wai Tung Ng, Abraham Yoo
Publikováno v:
2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology.
CMOS compatible power devices have been an intensely pursued area in the past few decades. Power integrated circuit technologies are now accessible by many designers via popular foundry services. This paper is a brief review on modern integrated powe