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Preparation and characterization of conjugated PVA/PANi blend films doped with functionalized graphene for thermoelectric applications.

Autor: Morad MA; Physics Department, Faculty of Science, Menoufia University, Shebin El-Koom, Egypt., Abo Ghazala MS; Physics Department, Faculty of Science, Menoufia University, Shebin El-Koom, Egypt., El-Shaarawy MG; Physics Department, Faculty of Science, Benha University, Benha, Egypt., Gouda ME; Physics Department, Faculty of Science, Benha University, Benha, Egypt., Elrasasi TY; Physics Department, Faculty of Science, Benha University, Benha, Egypt. tarek.elrasasi@fsc.bu.edu.eg.

Publikováno v: Scientific reports [Sci Rep] 2024 Jul 19; Vol. 14 (1), pp. 16722. Date of Electronic Publication: 2024 Jul 19.

Controlling barrier height and spectral responsivity of p-i-n based GeSn photodetectors via arsenic incorporation.

Autor: Nawwar MA; Physics Department, Faculty of Science, Menoufia University Shebin El-Koom Menoufia 32511 Egypt mohamed.nawwar@science.menofia.edu.eg., Abo Ghazala MS; Physics Department, Faculty of Science, Menoufia University Shebin El-Koom Menoufia 32511 Egypt mohamed.nawwar@science.menofia.edu.eg., Sharaf El-Deen LM; Physics Department, Faculty of Science, Menoufia University Shebin El-Koom Menoufia 32511 Egypt mohamed.nawwar@science.menofia.edu.eg., Anis B; Spectroscopy Department, Physics Research Institute, National Research Centre 33 El Bohouth St., Dokki 12622 Giza Egypt., El-Shaer A; Physics Department, Faculty of Science, Kafrelsheikh University KafrelSheikh 33516 Egypt., Elseman AM; Electronic Materials Department, Advanced Technology and New Materials Research Institute, City of Scientific Research and Technological Applications (SRTA-City) New Borg El-Arab City Alexandria 21943 Egypt., Rashad MM; Electronic Materials Department, Advanced Technology and New Materials Research Institute, City of Scientific Research and Technological Applications (SRTA-City) New Borg El-Arab City Alexandria 21943 Egypt., Kashyout AEB; Electronic & Magnetic Materials Department, Advanced Materials Institute, Central Metallurgical Research & Development Institute (CMRDI) 11421 Helwan-Cairo Egypt akashyout@srtacity.sci.eg.

Publikováno v: RSC advances [RSC Adv] 2023 Mar 20; Vol. 13 (14), pp. 9154-9167. Date of Electronic Publication: 2023 Mar 20 (Print Publication: 2023).

Fabrication of Nanocrystalline Silicon Thin Films Utilized for Optoelectronic Devices Prepared by Thermal Vacuum Evaporation.

Autor: Abo Ghazala MS; Physics Department, Faculty of Science, Menoufia University, Shebin El-Kom, Menoufia 32511, Egypt., Othman HA; Physics Department, Faculty of Science, Menoufia University, Shebin El-Kom, Menoufia 32511, Egypt., Sharaf El-Deen LM; Physics Department, Faculty of Science, Menoufia University, Shebin El-Kom, Menoufia 32511, Egypt., Nawwar MA; Physics Department, Faculty of Science, Menoufia University, Shebin El-Kom, Menoufia 32511, Egypt., Kashyout AEB; Electronic Materials Department, Advanced Technology and New Materials Research Institute, City of Scientific Research and Technological Applications (SRTA-City), New Borg El-Arab City, Alexandria 21934, Egypt.

Publikováno v: ACS omega [ACS Omega] 2020 Oct 16; Vol. 5 (42), pp. 27633-27644. Date of Electronic Publication: 2020 Oct 16 (Print Publication: 2020).