Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Abi Tannous, Tony"'
Autor:
Abi Tannous, Tony
Nous avons pour objectif de jeter les bases d’une technologie en totale rupture avec celles existantes pour la fabrication d’une nouvelle génération de composants électroniques à base du Carbure de Silicium pour les applications à très haut
Externí odkaz:
http://www.theses.fr/2015ISAL0141
Autor:
Abou Hamad, Valdemar, Abi Tannous, Tony, Soueidan, Maher, Gremillard, Laurent, Fabregue, Damien, Penuelas, Jose, Zaatar, Youssef
Publikováno v:
In Microelectronics Reliability July 2020 110
Autor:
Jaud, Alexandre, Auvray, Laurent, Kahouli, Abdelkarim, Abi-Tannous, Tony, Linas, Sébastien, Ferro, Gabriel, Brylinski, Christian
Publikováno v:
In Journal of Crystal Growth 1 June 2017 467:18-28
Autor:
Ferro, Gabriel, Jaud, Alexandre, Auvray, Laurent, Kahouli, Abdelkarim, Abi-Tannous, Tony, Linas, Sébastien, Brylinski, Christian
Publikováno v:
Journal of Crystal Growth
Journal of Crystal Growth, Elsevier, 2017, 467, pp.18-28. ⟨10.1016/j.jcrysgro.2017.03.018⟩
Journal of Crystal Growth, Elsevier, 2017, 467, pp.18-28. ⟨10.1016/j.jcrysgro.2017.03.018⟩
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::fc4b570a55628feeefc40fc4f991aca1
https://hal.archives-ouvertes.fr/hal-01615173
https://hal.archives-ouvertes.fr/hal-01615173
Autor:
Ferro, Gabriel, Jaud, Alexandre, Auvray, Laurent, Kahouli, Abdelkarim, Abi-Tannous, Tony, Cauwet, François, Brylinski, Christian
Publikováno v:
physica status solidi (a)
physica status solidi (a), Wiley, 2017, 214 (4), ⟨10.1002/pssa.201600428⟩
physica status solidi (a), Wiley, 2017, 214 (4), ⟨10.1002/pssa.201600428⟩
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::15f325282729156fd32c218b67a55d44
https://hal.archives-ouvertes.fr/hal-01615198
https://hal.archives-ouvertes.fr/hal-01615198
Autor:
Abi-Tannous, Tony, Soueidan, Maher, Ferro, Gabriel, Lazar, Mihai, Raynaud, Christophe, Gardiola, Bruno, Planson, Dominique
Publikováno v:
Materials Science Forum
Materials Science Forum, Trans Tech Publications Inc., 2016, 858, pp.553-556. ⟨10.4028/www.scientific.net/MSF.858.553⟩
Materials Science Forum, Trans Tech Publications Inc., 2016, 858, pp.553-556. ⟨10.4028/www.scientific.net/MSF.858.553⟩
International audience; In this study, the electrical properties of Ti3SiC2 based ohmic contacts formed on p-type 4H-SiC(0001) 4°-off substrates were studied. The Ti3SiC2 thin films were grown by thermal annealing (from 900°C to 1200°C) of Ti50Al5
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::b9d1ebc70f0227ec9efc5ea4b1dc8824
https://hal.archives-ouvertes.fr/hal-01388027
https://hal.archives-ouvertes.fr/hal-01388027
Autor:
Abi-Tannous, Tony, Soueidan, Maher, Ferro, G., Lazar, Mihai, Raynaud, Christophe, Planson, Dominique
Publikováno v:
Proceedigns of the International Conference on Silicon Carbide and Related Materials 2015
ICSCRM
ICSCRM, Oct 2015, Giardini Naxos, Italy
ICSCRM
ICSCRM, Oct 2015, Giardini Naxos, Italy
International audience; The high-temperature functionality of SiC devices is useless without ohmic contacts that are also capable of operation under the same conditions. However, during long-term operation at high temperatures, reactions between meta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::03f684e0fad6647e57c33f11fb60c78d
https://hal.archives-ouvertes.fr/hal-02138520/document
https://hal.archives-ouvertes.fr/hal-02138520/document
Autor:
Abi-Tannous, Tony, Soueidan, Maher, Ferro, Gabriel, Lazar, Mihai, Toury, Berangère, Beaufort, Marie-France, Barbot, Jean François, Penuelas, Jose, Planson, Dominique
Publikováno v:
Materials Science Forum
Materials Science Forum, Trans Tech Publications Inc., 2015, 821-823, pp.432-435. ⟨10.4028/www.scientific.net/MSF.821-823.432⟩
Materials Science Forum, Trans Tech Publications Inc., 2015, 821-823, pp.432-435. ⟨10.4028/www.scientific.net/MSF.821-823.432⟩
International audience; In order to form Ti3SiC2 on 4H-SiC(0001) 8°-off, 200 nm of Ti30Al70 was deposited onto SiC substrates by magnetron sputtering from pure Ti30Al70 targets. The samples were then annealed at 1000°C for 10 min under Ar atmospher
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::e73183ef51d8aee981df30c39a69866c
https://hal.archives-ouvertes.fr/hal-01391858
https://hal.archives-ouvertes.fr/hal-01391858
Akademický článek
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Autor:
Abi Tannous, Tony, Soueidan, Maher, Ferro, Gabriel, Lazar, Mihai, Toury, Bérangère, Beaufort, M.F., Barbot, Jean François, Penuelas, Jose, Planson, Dominique
Publikováno v:
Proceedings of the 2014 European Conference on Silicon Carbide and Related Materials
ECSCRM'14
ECSCRM'14, Sep 2014, Grenoble, France. pp.TU-P-63
ECSCRM'14
ECSCRM'14, Sep 2014, Grenoble, France. pp.TU-P-63
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::d7c670319b1541a2f207a536e0486f63
https://hal.archives-ouvertes.fr/hal-02428741/document
https://hal.archives-ouvertes.fr/hal-02428741/document