Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Abhitosh Vais"'
Autor:
Yves Mols, Abhitosh Vais, Sachin Yadav, Liesbeth Witters, Komal Vondkar, Reynald Alcotte, Marina Baryshnikova, Guillaume Boccardi, Niamh Waldron, Bertrand Parvais, Nadine Collaert, Robert Langer, Bernardette Kunert
Publikováno v:
Materials, Vol 14, Iss 19, p 5682 (2021)
Nano-ridge engineering (NRE) is a novel method to monolithically integrate III–V devices on a 300 mm Si platform. In this work, NRE is applied to InGaP/GaAs heterojunction bipolar transistors (HBTs), enabling hybrid III-V/CMOS technology for RF app
Externí odkaz:
https://doaj.org/article/5168191abba442179b4c35c49a36ad89
Autor:
Bernardette Kunert, Yves Mols, Reynald Alcotte, Peter Swekis, Sachin Yadav, Abhitosh Vais, Annie Kumar, Guillaume Boccardi, Robert Langer, Bertrand Parvais, Nadine Collaert
Publikováno v:
ECS Transactions. 111:105-116
The power amplifier (PA) in an RF front-end module operating above 100 GHz required for 6G wireless networks is the most power-hungry device circuit component. In that respect, InP-based heterojunction bipolar transistors (HBT) clearly outperform oth