Zobrazeno 1 - 10
of 46
pro vyhledávání: '"Abhishek Dube"'
Autor:
Ravi Patel, Abhishek Dube, Ravisinh Solanki, Dignesh Khunt, Shalin Parikh, Vijayabhaskarreddy Junnuthula, Sathish Dyawanapelly
Publikováno v:
Molecules, Vol 27, Iss 17, p 5606 (2022)
A novel stability-indicating, reversed-phase, high-performance liquid chromatography (RP-HPLC) method was developed and validated for the determination of favipiravir in an oral suspension. The effective separation of favipiravir and its degradation
Externí odkaz:
https://doaj.org/article/ac3f38800b0f40bc9530715bc6cded12
Autor:
Akash Kumar Saha, Priyank Parashari, Tarak Nath Maity, Abhishek Dubey, Subhadip Bouri, Ranjan Laha
Publikováno v:
European Physical Journal C: Particles and Fields, Vol 84, Iss 9, Pp 1-9 (2024)
Abstract Recent observation of Sagittarius A $$^*$$ ∗ (Sgr A $$^*$$ ∗ ) by the Event Horizon Telescope (EHT) collaboration has uncovered various unanswered questions in black hole (BH) physics. Besides, it may also probe various beyond the Standa
Externí odkaz:
https://doaj.org/article/f38fdf37f91746ddb425bb7ffa621736
Autor:
Saurabh Chopra, Abhishek Dube, Schubert S. Chu, Miao-Chun Chen, Liu Patricia M, Chen-Ying Wu, Zhiyuan Ye, Chang Flora Fong-Song, Xuebin Li
Publikováno v:
ECS Transactions. 98:239-250
In last 15 years, n-type doped selective epitaxy in source and drain (S/D) for nMOS have been heavily investigated. Initial interests for nMOS S/D epitaxy were focused on carbon and phosphorus doped Si:CP film for channel strain engineering and was a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f3855e00c32640dd6fc394cd9af568db
https://doi.org/10.1149/09805.0239ecst
https://doi.org/10.1149/09805.0239ecst
Publikováno v:
Journal of Pharmacy and Bioallied Sciences, Vol 16, Iss Suppl 3, Pp S2327-S2329 (2024)
Context: Performing surgery on the anterior mandible could harm the mandibular incisive canal (MIC). To prevent it, preoperative radiographic assessment is essential. Aims: Aim of our study was to examine the visibility and presence of the MIC along
Externí odkaz:
https://doaj.org/article/703d333d55d4453691474d648e87612d
Autor:
Shashank Sharma, Balasubramanian S. Pranatharthi Haran, Dechao Guo, Hemanth Jagannathan, Michael Chudzik, Kevin R. Winstel, Donald F. Canaperi, H.-J. Gossmann, Lan Yu, Samuel S. Choi, Shogo Mochizuki, Benjamin Colombeau, S.H. Lin, Abhishek Dube, Schubert S. Chu, J. Boland, F. Chang, Nicolas Loubet, M. Cogorno, D. McHerron, M. Stolfi, Richard A. Conti, Qu Jin, Sanjay Natarajan, Liu Patricia M, Zhenxing Bi, Z. Li
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM).
In this paper, we demonstrate a novel Source Drain Extension (SDE) approach to enable NMOS device scaling along with improved performance. For the first time, SDE formation with epitaxially grown As doped Si (Si:As) has been examined and compared to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::faef8419b35847a0ecbfd3358552dfad
https://doi.org/10.1109/iedm.2018.8614543
https://doi.org/10.1109/iedm.2018.8614543
Publikováno v:
ECS Transactions. 75:599-604
Silicon germanium (SiGe) strain relaxed buffers (SRB) have been an active area of investigation both in academia as well as the semiconductor industry for a number of years [1, 2]. These relaxed epitaxial layers act as virtual substrates or templates
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d370623dde86058794c3baf64ce1adbe
https://doi.org/10.1149/07508.0599ecst
https://doi.org/10.1149/07508.0599ecst
Publikováno v:
The Journal of Physical Chemistry C. 116:21948-21960
We have examined the initial stages of atomic layer deposition (ALD) of TaNx on SiO2, a porous low-κ SiO2-based material, and both of these substrates modified by a branched interfacial organic layer, using in situ X-ray photoelectron spectroscopy (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64dd567a9300754dc27f9cec00f83b3f
https://doi.org/10.1021/jp3086232
https://doi.org/10.1021/jp3086232
Autor:
Eric C. T. Harley, Z. Zhu, Judson R. Holt, Matthew W. Stoker, R. Takalkar, L. Black, Rainer Loesing, A. Chakravarti, F. Yang, Dominic J. Schepis, James Chingwei Li, Xiaolin Chen, R. Murphy, Anita Madan, Thomas N. Adam, Abhishek Dube
Publikováno v:
ECS Transactions. 28:63-71
Uniaxial tensile strain in the channel enhances electron mobility and hence the drive current in an N-type field-effect transistor (NFET). For enhancement of NFET drive current via channel strain, the incorporation of embedded silicon carbon (eSi:C)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3cbe71f67a20208ceb5421c37d5d386
https://doi.org/10.1149/1.3375589
https://doi.org/10.1149/1.3375589
Autor:
R. Takalkar, Anita Madan, Dominic J. Schepis, Eric C. Harley, Bin Yang, Abhishek Dube, Teresa L. Pinto, Zhibin Ren, Thomas N. Adam, Linda Black, Z. Zhu, Johan W. Weijtmans, Rainer Loesing, Jinghong Li, Ashima B. Chakravarti
Publikováno v:
ECS Transactions. 16:325-332
In addition to device scaling, strain engineering using SiC stressors in the S/D regions is important for nFET performance enhancement [1-3]. In this paper, we review the characterization of fully-strained epitaxial SiC and in-situ doped SiC:P films
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d314f9756c2842729e426ac06916377
https://doi.org/10.1149/1.2986790
https://doi.org/10.1149/1.2986790
Autor:
Scott Luning, Ashima B. Chakravarti, Z. Zhu, A. Gehring, Anita Madan, Alexander Reznicek, Guangrui Xia, R. Takalkar, Dan Mocuta, Dominic J. Schepis, B. Yang, Thomas N. Adam, E. Leobandung, Ka Kong Chan, J. Faltermeier, J. P. de Souza, Zhibin Ren, John Li, Rohit Pal, Eric C. Harley, Edward P. Maciejewski, Brian J. Greene, Abhishek Dube, D.-G. Park, M. Cai, D. K. Sadana, Linda Black, Bin Yang, Johan W. Weijtmans, G. Pei
Publikováno v:
ECS Transactions. 16:317-323
Summary In summary, this work demonstrates that integrating ISPD eSi:C stressor in the thick-oxide long-channel nMOS source and drain is feasible. Key challenges lie in both high-quality ISPD eSi:C EPI development and modification of the conventional
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::479e8a9b274b3fc5f4f083f4de0812c6
https://doi.org/10.1149/1.2986789
https://doi.org/10.1149/1.2986789