Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Abhishek B. Solanki"'
Autor:
Abhishek B. Solanki, Simeon I. Bogdanov, Mohammad M. Rahman, Avinash Rustagi, Neil R. Dilley, Tingting Shen, Wenqi Tong, Punyashloka Debashis, Zhihong Chen, Joerg Appenzeller, Yong P. Chen, Vladimir M. Shalaev, Pramey Upadhyaya
Publikováno v:
Physical Review Research, Vol 4, Iss 1, p L012025 (2022)
Hybrid systems coupling quantum spin defects (QSD) and magnons can enable unique spintronic device functionalities and probes for magnetism. Here, we add electric field control of magnon-QSD coupling to such systems by integrating ferromagnet-ferroel
Externí odkaz:
https://doaj.org/article/ac179339a4ee48a689fcea9dc748f2d2
Autor:
Tongcang Li, Xingyu Gao, Boyang Jiang, Andres E. Llacsahuanga Allcca, Kunhong Shen, Mohammad A. Sadi, Abhishek B. Solanki, Peng Ju, Zhujing Xu, Pramey Upadhyaya, Yong P. Chen, Sunil A. Bhave
Publikováno v:
Conference on Lasers and Electro-Optics.
We report high-contrast (as high as 46%) optically detected magnetic resonance of boron vacancy spin defects in hexagonal boron nitride. We also observed plasmonic enhancement and hyperfine splitting of these spin defects.
Autor:
Xiaohui Xu, Abhishek B. Solanki, Demid Sychev, Xingyu Gao, Samuel Peana, Aleksandr S. Baburin, Karthik Pagadala, Zachariah O. Martin, Sarah N. Chowdhury, Yong P. Chen, Takashi Taniguchi, Kenji Watanabe, Ilya A. Rodionov, Alexander V. Kildishev, Tongcang Li, Pramey Upadhyaya, Alexandra Boltasseva, Vladimir M. Shalaev
Publikováno v:
Xu, X, Solanki, A B, Sychev, D, Gao, X, Peana, S, Baburin, A S, Pagadala, K, Martin, Z O, Chowdhury, S N, Chen, Y P, Taniguchi, T, Watanabe, K, Rodionov, I A, Kildishev, A V, Li, T, Upadhyaya, P, Boltasseva, A & Shalaev, V M 2023, ' Greatly Enhanced Emission from Spin Defects in Hexagonal Boron Nitride Enabled by a Low-Loss Plasmonic Nanocavity ', Nano Letters, vol. 23, no. 1, pp. 25-33 . https://doi.org/10.1021/acs.nanolett.2c03100
Two-dimensional hexagonal boron nitride (hBN) has been known to host a variety of quantum emitters with properties suitable for a broad range of quantum photonic applications. Among them, the negatively charged boron vacancy (VB-) defect with optical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::32fa08b0f3fdc14c4c0886a370f84f1a
Autor:
Xiaohui Xu, Abhishek. B. Solanki, Demid Sychev, Xingyu Gao, Zachariah O. Martin, Alexander S. Baburin, Yong P. Chen, Ilya A. Rodionov, Alexander Kildishev, Tongcang Li, Pramey Upadhyaya, Alexandra Boltasseva, Vladimir M. Shalaev
Publikováno v:
Conference on Lasers and Electro-Optics.
We demonstrate 120-fold photoluminescence enhancement of VB- spin defects in hBN by coupling them to nanopatch antennas. Since the laser spot is 6.25 times larger than the antenna area, the actual enhancement is 750-fold.
Publikováno v:
IEEE Transactions on Electron Devices. 65:322-330
This paper highlights the output current saturation in a line tunneling-based tunnel FET (LT-TFET). Thereafter, a novel method to extract the onset of saturation voltage ( ${V}_{\textsf {DSAT}}$ ) for LT-TFET is proposed for the first time. A soft sa