Zobrazeno 1 - 10
of 210
pro vyhledávání: '"Abhinav Kranti"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 276-281 (2019)
In this paper, we propose a novel structure of doping-less 1T-DRAM with raised body and Schottky contact to source/drain regions which uses thermionic emission to generate electrons and holes. As the device is free from physical doping, the problems
Externí odkaz:
https://doaj.org/article/c453c86974bc47caa78e6e295f05039d
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 5, Iss 1, Pp 59-63 (2017)
We experimentally demonstrate a new type of silicon-based capacitorless one-transistor dynamic random access memory (1T-DRAM) with an electron-bridge channel. The fabrication steps are fully compatible with modern CMOS technology. An underlap device
Externí odkaz:
https://doaj.org/article/4f754c5547b8407dbced11ab41908dec
Publikováno v:
IEEE Transactions on Electron Devices. 69:3983-3989
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::babad84ec9ef5ab97ec63b013c41b16e
https://doi.org/10.1109/ted.2022.3172045
https://doi.org/10.1109/ted.2022.3172045
Publikováno v:
2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a18570c033ce96fde1608ab623c2ff48
https://doi.org/10.1109/vlsi-tsa/vlsi-dat57221.2023.10134488
https://doi.org/10.1109/vlsi-tsa/vlsi-dat57221.2023.10134488
Publikováno v:
IEEE Transactions on Electron Devices. 69:3163-3168
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32e57c9babd6de0bbbf9abab609defe4
https://doi.org/10.1109/ted.2022.3170284
https://doi.org/10.1109/ted.2022.3170284
Publikováno v:
IEEE Transactions on Electron Devices. 68:4797-4800
The operation of reconfigurable field effect transistor (RFET) is governed by Schottky barrier, ungated regions as well as control and polarity gates. The inherent architecture of RFET, apart from lowering the effective drain bias, impedes the use of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd04b14e229a7efbac4c8c870ee6d8e1
https://doi.org/10.1109/ted.2021.3096500
https://doi.org/10.1109/ted.2021.3096500
Autor:
Nima Dehdashti Akhavan, Jean-Pierre Colinge, Renan Trevisoli, Isabelle Ferain, Ran Yu, Marcelo Antonio Pavanello, Rodrigo T. Doria, Ran Yan, Pedram Razavi, Michelly de Souza, Abhinav Kranti, Chi-Woo Lee
Publikováno v:
Journal of Integrated Circuits and Systems. 6:114-121
This paper performs a comparative study of the analog performance of Junctionless Nanowire Transistors (JNTs) and classical Trigate inversion mode (IM) devices focusing on the harmonic distortion. The study has been carried out in the temperature ran
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46da4b7c3190bebcf66397b86f2df6ec
https://doi.org/10.29292/jics.v6i2.347
https://doi.org/10.29292/jics.v6i2.347
Publikováno v:
IEEE Transactions on Electron Devices. 67:3868-3875
In this work, we present purely device-dependent conditions for achieving hysteresis-free sub-60 mV/decade (HF-sub-60) current transition in metal–ferroelectric–insulator–semiconductor (MFIS) nanowire transistor. The proposed bias-independent c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0e34f872a9ff3798323b7a821bfcc5c
https://doi.org/10.1109/ted.2020.3008888
https://doi.org/10.1109/ted.2020.3008888
Publikováno v:
Japanese Journal of Applied Physics. 62:SC1040
High-speed write/read operation and low energy consumption along with a lower footprint are prerequisites for one transistor (1 T) embedded DRAM (eDRAM). This work evaluates the suitability of two different reconfigurable transistors (RFET) architect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c12ed8db4b47335d40ed997e7a392061
https://doi.org/10.35848/1347-4065/acb0db
https://doi.org/10.35848/1347-4065/acb0db