Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Abhilash A. Sebastian"'
Autor:
Todoshchenko, Igor, Kamada, Masahiro, Kaikkonen, Jukka-Pekka, Liao, Yongping, Savin, Alexander, Will, Marco, Sergeicheva, Elena, Abhilash, Thanniyil Sebastian, Kauppinen, Esko, Hakonen, Pertti
Low dimensional fermionic quantum systems are exceptionally interesting because they reveal distinctive physical phenomena, including among others, topologically protected excitations, edge states, frustration, and fractionalization. Two-dimensional
Externí odkaz:
http://arxiv.org/abs/2010.13748
Autor:
Glenn Ross, Hongqun Dong, Cyril Baby Karuthedath, Abhilash Thanniyil Sebastian, Tuomas Pensala, Mervi Paulasto-Kröckel
Publikováno v:
Materials & Design, Vol 196, Iss , Pp 109126- (2020)
Resonating piezoelectric devices, such as aluminum nitride (AlN) piezoelectric micromachined ultrasonic transducers (PMUTs), display superior performance to previous generations of resonating microelectromechanical systems (MEMS). However, the qualit
Externí odkaz:
https://doaj.org/article/7f076fbb12324efdafb49e13e0d2a406
Publikováno v:
Day 1 Mon, May 01, 2023.
Use of steel catenary and lazy wave risers has increased as oil and gas developments are happening in deeper waters or in parts of the world with no pipeline infrastructure utilizing Floating Production Storage and Offloading (FPSO) vessels as a host
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77c5aa2b37a5674c14a8be127b686a5b
https://doi.org/10.4043/32179-ms
https://doi.org/10.4043/32179-ms
Publikováno v:
Karuthedath, C, Abhilash, T S, Sillanpää, T & Pensala, T 2022, Passive Temperature Compensation of Piezoelectric Micromachined Ultrasonic Transducers (PMUTs) . in IUS 2022-IEEE International Ultrasonics Symposium . IEEE Institute of Electrical and Electronic Engineers, IEEE International Ultrasonics Symposium (IUS), Venice, Italy, 10/10/22 . https://doi.org/10.1109/IUS54386.2022.9958710
The resonance frequency of conventional PMUT varies with temperature. This paper discusses a passive method to reduce the temperature coefficient of resonance frequency (TCF) of PMUT. Temperature compensation is achieved by selecting surface areas, l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0aea06deeca41bb20fce79a68790b5c2
https://doi.org/10.1109/ius54386.2022.9958710
https://doi.org/10.1109/ius54386.2022.9958710
Publikováno v:
Volume 3: Materials Technology; Pipelines, Risers, and Subsea Systems.
Risers and flowlines are integral parts of deepwater oil and gas field developments. Risers serve as the interface between floating platforms and subsea flowlines and are often subjected to flowline walking (i.e., continuous ratcheting of the riser-f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74608b989c716946691519e61ea873d6
https://doi.org/10.1115/omae2022-78590
https://doi.org/10.1115/omae2022-78590
Publikováno v:
Journal of Microelectromechanical Systems
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=r3c4b2081b22::712f1bcfb2a076334751c33a0f8d416e
Autor:
Konsta Airola, Stefan Mertin, Jari Likonen, Enni Hartikainen, Kenichiro Mizohata, James Dekker, Abhilash Thanniyil Sebastian, Tuomas Pensala
Publikováno v:
Airola, K, Mertin, S, Likonen, J, Hartikainen, E, Mizohata, K, Dekker, J R, Thanniyil Sebastian, A & Pensala, T 2022, ' High-fidelity patterning of AlN and ScAlN thin films with wet chemical etching ', Materialia, vol. 22, 101403 . https://doi.org/10.1016/j.mtla.2022.101403
We report on the anisotropic wet etching of sputtered AlN and Sc0.2Al0.8N thin films. With tetramethyl ammonium hydroxide at 80 °C, the etch rates along the c-axis were 330 and 30 nm/s for AlN and Sc0.2Al0.8N, respectively. Although the etching was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d5e3da94ef18b5ad998c61e1fb4fdbcf
https://doi.org/10.1016/j.mtla.2022.101403
https://doi.org/10.1016/j.mtla.2022.101403
Autor:
Lotnyk D; Department of Physics, Cornell University, Ithaca, New York 14853, USA., Eyal A; Department of Physics, Cornell University, Ithaca, New York 14853, USA.; Physics Department, Technion, Haifa 3200003, Israel., Zhelev N; Department of Physics, Cornell University, Ithaca, New York 14853, USA., Sebastian A; Department of Physics, Cornell University, Ithaca, New York 14853, USA.; VTT Technical Research Centre of Finland Ltd, Espoo 02150, Finland., Tian Y; Department of Physics, Cornell University, Ithaca, New York 14853, USA., Chavez A; Department of Physics, Cornell University, Ithaca, New York 14853, USA., Smith E; Department of Physics, Cornell University, Ithaca, New York 14853, USA., Saunders J; Department of Physics, Royal Holloway University of London, Egham TW20 0EX, Surrey, United Kingdom., Mueller E; Department of Physics, Cornell University, Ithaca, New York 14853, USA., Parpia J; Department of Physics, Cornell University, Ithaca, New York 14853, USA.
Publikováno v:
Physical review letters [Phys Rev Lett] 2021 May 28; Vol. 126 (21), pp. 215301.