Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Abhay V. Agrawal"'
Publikováno v:
Nano-Micro Letters, Vol 13, Iss 1, Pp 1-58 (2021)
Abstract Nitrogen dioxide (NO2), a hazardous gas with acidic nature, is continuously being liberated in the atmosphere due to human activity. The NO2 sensors based on traditional materials have limitations of high-temperature requirements, slow recov
Externí odkaz:
https://doaj.org/article/5758dbf436584a87bce57421d9f171aa
Publikováno v:
International Journal of Hydrogen Energy. 45:9268-9277
Here, we present a highly sensitive and fast hydrogen (H2) sensor for 1% H2, well below the critical limit of explosion ignite in air, in a temperature range of 28–150 °C by using monolayer MoS2 pyramid structures with enhanced adsorption sites. T
Autor:
Ramesh Raliya, Saravanan Rajamani, Neeraj Goel, Abhay V. Agrawal, Mukesh Kumar, Govind Gupta, Mahesh Kumar, Rajesh Kumar, Pratim Biswas
Publikováno v:
IEEE Sensors Journal. 19:10214-10220
A design of an advanced sensing material, such as MoS2, is imperative to enhance the sensing performance of a sensor. Because their usage alone for developing a practical sensor is impeditive owing to low gas response and slow response/recovery kinet
Autor:
Abhay V. Agrawal, Naveen Kumar, Deepu Kumar, Shubhendra K. Jain, Govind Gupta, Pradeep Kumar, Mukesh Kumar
Publikováno v:
Surfaces and Interfaces. 30:101813
Semiconductor-based gas sensors are the important family of electronic devices that are widely used in various sciences and industries. The basic principles of this type of sensor are based on the reaction of the gas molecules and the semiconductor s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe814967571f4b78f5bc5b64eccdb17c
https://doi.org/10.1016/b978-0-12-818821-7.00006-3
https://doi.org/10.1016/b978-0-12-818821-7.00006-3
Autor:
Abhay V. Agrawal, Manuel Aleixandre, Amrane Abdeltif, M. Amutheesan, Muhammad Aslam, Aymen Amine Assadi, Asli Baysal, Velayutha Pandian Bharathi, Abdelkrim Bouzaza, Rafael G. Campos-Montiel, Chaomeng Dai, R. Elancheran, José M. Estrada, Fabián Fernández-Luqueño, Selvia García-Mayagoitia, R. Govindhan, M. Gundhavi devi, Nitasha Habib, Majid Bagheri Hosseinabadi, Ivana Jaciw-Zurakowsky, Jose Gnanaleela Aswin Jeno, Joon Ching Juan, Balakrishnan Karthikeyan, Asim Laeeq Khan, Atif Khan, Mukesh Kumar, Chin Wei Lai, Kian Mun Lee, Kah Hon Leong, Robert L. Liang, Sivachandiran Loganathan, Gabriela Medina-Pérez, Mahmood Moradi, Ekambaram Nakkeeran, Jit Jang Ng, Thien Vuong Nguyen, Tuan Anh Nguyen, Phuong Nguyen-Tri, Wen-Da Oh, Hermes Pérez-Hernández, Guillermo Quijano, T. Subba Rao, Ravichandran Rathna, Sami Rtimi, Jose Pedro Santos, Wala Abou Saoud, Pichiah Saravanan, Isabel Sayago, Hasan Saygin, Olivia M. Schneider, Lan Ching Sim, Nedumaran Sivagami, Monika R. Snowdon, null Sushma, Xin Hong Tai, Masaki Ujihara, Dominique Wolbert, Anoop Yadav, Ramin Yousefi, Y. Norman Zhou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1fa115844ddc9bf5bb231f95193a797
https://doi.org/10.1016/b978-0-12-818821-7.00024-5
https://doi.org/10.1016/b978-0-12-818821-7.00024-5
Autor:
Mukesh Kumar, Naveen Kumar, F.C. Robles Hernández, Abhay V. Agrawal, Christopher Manspeaker, Swaminathan Venkatesan, Zhuan Zhu, Jiming Bao, Alex Zakhidov
Publikováno v:
ACS Applied Nano Materials. 1:2356-2367
Controlled and tunable growth of chemically active edge sites over inert in-plane MoS2 flakes is the key requirement to realize their vast number of applications in catalytic activities. Thermodynamically, growth of inert in-plane MoS2 is preferred d
Autor:
Mahesh Kumar, Swaminathan Venkatesan, Abhay V. Agrawal, Alex Zakhidov, Rajesh Kumar, Guang Yang, Jiming Bao, Mukesh Kumar
Publikováno v:
ACS Sensors. 3:998-1004
Toxic gases are produced during the burning of fossil fuels. Room temperature (RT) fast detection of toxic gases is still challenging. Recently, MoS2 transition metal dichalcogenides have sparked great attention in the research community due to their
Autor:
Dushyant Kushavah, Abhay V. Agrawal, Riya Wadhwa, Mukesh Kumar, Suman Kalyan Pal, Aamir Mushtaq
Publikováno v:
Applied Surface Science. 569:150949
Two dimensional (2D) van der Waals heterostructures are becoming one of the ascendant research areas for semiconducting device application owing to their remarkable optoelectronic properties, which allows more functioning ability beyond its individua
Publikováno v:
Journal of Physics D: Applied Physics. 55:063002
Two-dimensional layered materials have emerged prominently in the past decade, largely being investigated fundamentally and practically. Their unique layered structure and atomic-scale thickness make them attractive with exclusive electrical and opti