Zobrazeno 1 - 10
of 58
pro vyhledávání: '"Abhay A. Sagade"'
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 11, Iss 1, Pp 814-820 (2020)
The influence of single-layer graphene on top of a SiO2/Si surface on the orientation of nonplanar lead phthalocyanine (PbPc) molecules is studied using two-dimensional grazing incidence X-ray diffraction. The studies indicate the formation of a mixt
Externí odkaz:
https://doaj.org/article/8857a9d75f65414b8a7cc8c9b35c54f6
Publikováno v:
Sensors & Transducers, Vol 101, Iss 2, Pp 90-95 (2009)
We report the synthesis of copper sulphide (CuS) nano-pillars on copper sulphide thin film surface by using swift heavy ion (SHI) irradiation. Thin films of CuS are irradiated with 100 MeV gold ions at fluence varying from 1011 to 5 ´ 1012 ions/cm2.
Externí odkaz:
https://doaj.org/article/a8c4a08d6ded43d4b30094fa7f5d178b
Publikováno v:
Sensors & Transducers, Vol 95, Iss 8, Pp 81-85 (2008)
Resistive ammonia gas sensor is fabricated by using solution growth technique deposited copper sulfide (Cu1.8S) thin films. Structural and opto-electronic properties of the films are studied by X-ray diffraction, atomic force microscopy, optical abso
Externí odkaz:
https://doaj.org/article/de8f4b7eb80543dc95b4f5d4ba8f4e9b
Autor:
Jamie O. D. Williams, Jack A. Alexander-Webber, Jon S. Lapington, Mervyn Roy, Ian B. Hutchinson, Abhay A. Sagade, Marie-Blandine Martin, Philipp Braeuninger-Weimer, Andrea Cabrero-Vilatela, Ruizhi Wang, Andrea De Luca, Florin Udrea, Stephan Hofmann
Publikováno v:
Sensors, Vol 16, Iss 9, p 1351 (2016)
Graphene is a highly promising material in the development of new photodetector technologies, in particular due its tunable optoelectronic properties, high mobilities and fast relaxation times coupled to its atomic thinness and other unique electrica
Externí odkaz:
https://doaj.org/article/cf692349d2134e5798c80fa8c38fc6a8
Autor:
Marcel A. Verheijen, Reyhaneh Mahlouji, Abhay A. Sagade, Yue Zhang, Jan P. Hofmann, Wilhelmus M. M. Kessels, Ageeth A. Bol
Publikováno v:
ACS Applied Electronic Materials, 3(7), 3185-3199. American Chemical Society
Despite the extensive ongoing research on MoS2 field effect transistors(FETs), the key role of device processing conditions in the chemistry involved at the metalto-MoS2 interface and their influence on the electrical performance are often overlooked
Autor:
Thomas D. Anthopoulos, P. Rantakari, Henrik Forsten, Hendrik Faber, Yen-Hung Lin, James Semple, Akmaral Seitkhan, Abhay A. Sagade, Feras Alkhalil, Dimitra G. Georgiadou, Kalaivanan Loganathan
Publikováno v:
Georgiadou, D G, Semple, J, Sagade, A A, Forstén, H, Rantakari, P, Lin, Y H, Alkhalil, F, Seitkhan, A, Loganathan, K, Faber, H & Anthopoulos, T D 2020, ' 100 GHz zinc oxide Schottky diodes processed from solution on a wafer scale ', Nature Electronics, vol. 3, pp. 718-725 . https://doi.org/10.1038/s41928-020-00484-7
Inexpensive radio-frequency devices that can meet the ultrahigh-frequency needs of fifth- and sixth-generation wireless telecommunication networks are required. However, combining high performance with cost-effective scalable manufacturing has proved
Publikováno v:
Scripta Materialia. 184:19-23
The rhombohedral phase of silicon is fabricated over a large-area within the diamond cubic Si wafer using spherical nanoindentation. The ultraviolet and visible spectrum showed a ~50% lower reflectance for the rhombohedral Si compared to the pristine
Publikováno v:
Beilstein Journal of Nanotechnology
Beilstein journal of nanotechnology 11, 814-820 (2020). doi:10.3762/bjnano.11.66
Beilstein Journal of Nanotechnology, Vol 11, Iss 1, Pp 814-820 (2020)
Beilstein journal of nanotechnology 11, 814-820 (2020). doi:10.3762/bjnano.11.66
Beilstein Journal of Nanotechnology, Vol 11, Iss 1, Pp 814-820 (2020)
Beilstein journal of nanotechnology 11, 814 - 820 (2020). doi:10.3762/bjnano.11.66
The influence of single-layer graphene on top of a SiO$_2$/Si surface on the orientation of nonplanar lead phthalocyanine (PbPc) molecules is studied using two-di
The influence of single-layer graphene on top of a SiO$_2$/Si surface on the orientation of nonplanar lead phthalocyanine (PbPc) molecules is studied using two-di
Autor:
Reyhaneh, Mahlouji, Yue, Zhang, Marcel A, Verheijen, Jan P, Hofmann, Wilhelmus M M, Kessels, Abhay A, Sagade, Ageeth A, Bol
Publikováno v:
ACS Applied Electronic Materials
Despite the extensive ongoing research on MoS2 field effect transistors (FETs), the key role of device processing conditions in the chemistry involved at the metal-to-MoS2 interface and their influence on the electrical performance are often overlook
Publikováno v:
Oxide-based Materials and Devices XII.
5G networks are currently being deployed around the world, introducing a new era in machine-to-machine communications and reinforcing the Internet of Things. The 5G radiofrequency bands range from sub-1 GHz to 70 GHz, while the 6th generation (6G) is