All-Epitaxial Self-Assembly of Silicon Color Centers Confined Within Sub-Nanometer Thin Layers Using Ultra-Low Temperature Epitaxy.

Autor: Aberl J; Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Altenberger Straße 69, Linz, 4040, Austria., Navarrete EP; Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Altenberger Straße 69, Linz, 4040, Austria., Karaman M; Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Altenberger Straße 69, Linz, 4040, Austria., Enriquez DH; Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Altenberger Straße 69, Linz, 4040, Austria., Wilflingseder C; Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Altenberger Straße 69, Linz, 4040, Austria., Salomon A; Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Altenberger Straße 69, Linz, 4040, Austria., Primetzhofer D; Department of Physics and Astronomy, Uppsala University, Box 516, Uppsala, 75120, Sweden., Schubert MA; IHP-Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, D-15236, Frankfurt (Oder), Germany., Capellini G; IHP-Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, D-15236, Frankfurt (Oder), Germany.; Dipartimento di Scienze, Universita Roma Tre, Rome, 00146, Italy., Fromherz T; Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Altenberger Straße 69, Linz, 4040, Austria., Deák P; HUN-REN Wigner Research Centre for Physics, P.O. Box 49, Budapest, H-1525, Hungary.; Beijing Computational Science Research Center, Beijing, 100193, China., Udvarhelyi P; HUN-REN Wigner Research Centre for Physics, P.O. Box 49, Budapest, H-1525, Hungary.; Department of Atomic Physics, Institute of Physics, Budapest University of Technology and Economics, Műegyetem rakpart 3., Budapest, H-1111, Hungary., Li S; HUN-REN Wigner Research Centre for Physics, P.O. Box 49, Budapest, H-1525, Hungary., Gali Á; HUN-REN Wigner Research Centre for Physics, P.O. Box 49, Budapest, H-1525, Hungary.; Department of Atomic Physics, Institute of Physics, Budapest University of Technology and Economics, Műegyetem rakpart 3., Budapest, H-1111, Hungary.; MTA-WFK Lendület 'Momentum' Semiconductor Nanostructures Research Group, P.O. Box 49, Budapest, H-1525, Hungary., Brehm M; Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Altenberger Straße 69, Linz, 4040, Austria.

Publikováno v: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2024 Nov; Vol. 36 (48), pp. e2408424. Date of Electronic Publication: 2024 Oct 12.

Single SiGe quantum dot emission deterministically enhanced in a high-Q photonic crystal resonator.

Autor: Poempool T, Aberl J, Clementi M, Spindlberger L, Vukušić L, Galli M, Gerace D, Fournel F, Hartmann JM, Schäffler F, Brehm M, Fromherz T

Publikováno v: Optics express [Opt Express] 2023 May 08; Vol. 31 (10), pp. 15564-15578.

Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.

Composition Dependent Electrical Transport in Si 1-x Ge x Nanosheets with Monolithic Single-Elementary Al Contacts.

Autor: Wind L; Institute of Solid State Electronics, Technische Universität Wien, Gußhausstraße 25-25a, Vienna, 1040, Austria., Sistani M; Institute of Solid State Electronics, Technische Universität Wien, Gußhausstraße 25-25a, Vienna, 1040, Austria., Böckle R; Institute of Solid State Electronics, Technische Universität Wien, Gußhausstraße 25-25a, Vienna, 1040, Austria., Smoliner J; Institute of Solid State Electronics, Technische Universität Wien, Gußhausstraße 25-25a, Vienna, 1040, Austria., Vukŭsić L; Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Altenberger Straße 69, Linz, 4040, Austria., Aberl J; Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Altenberger Straße 69, Linz, 4040, Austria., Brehm M; Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Altenberger Straße 69, Linz, 4040, Austria., Schweizer P; Swiss Federal Laboratories for Materials Science and Technology, Laboratory for Mechanics of Materials and Nanostructures, Feuerwerkstrasse 39, Thun, 3602, Switzerland., Maeder X; Swiss Federal Laboratories for Materials Science and Technology, Laboratory for Mechanics of Materials and Nanostructures, Feuerwerkstrasse 39, Thun, 3602, Switzerland., Michler J; Swiss Federal Laboratories for Materials Science and Technology, Laboratory for Mechanics of Materials and Nanostructures, Feuerwerkstrasse 39, Thun, 3602, Switzerland., Fournel F; CEA-LETI, University Grenoble Alpes, 17 Avenue des Martyrs, Grenoble, 38000, France., Hartmann JM; CEA-LETI, University Grenoble Alpes, 17 Avenue des Martyrs, Grenoble, 38000, France., Weber WM; Institute of Solid State Electronics, Technische Universität Wien, Gußhausstraße 25-25a, Vienna, 1040, Austria.

Publikováno v: Small (Weinheim an der Bergstrasse, Germany) [Small] 2022 Nov; Vol. 18 (44), pp. e2204178. Date of Electronic Publication: 2022 Sep 22.

Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.