Zobrazeno 1 - 10 of 17 pro vyhledávání: '"Abduvayitov, A. A."'
1
Akademický článek
Effect of argon ion bombardment on the composition, electronic structure and physical properties of cadmium fluoride
Autor: Abduvayitov Akbarjon, Tashmukhamedova Dilnoza, Umirzakov Boltakhodja, Bekpulatov Ilkhom, Khujaniyozov Jumanazar, Loboda Vera
Publikováno v: St. Petersburg Polytechnical University Journal: Physics and Mathematics, Vol 17, Iss 3 (2024)
In the paper, the effect of bombardment with Ar+ ions on the composition, electronic and crystal structure of the surface layers of bulk single crystal samples and CdF2(111) films has been studied using the methods of Auger electron and ultraviolet p
Externí odkaz: https://doaj.org/article/45aceb1916e44fcd80e1c31e6647fa9c
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2
Akademický článek
Study of the profiles of the distribution of atoms of the contacting material over the depth of pure and ion-doped silicon
Autor: Donaev S.B., Shirinov G.M., Ergasheva S., Rakhimov A.M., Wang Shenghao, Abduvayitov A.A.
Publikováno v: E3S Web of Conferences, Vol 383, p 04041 (2023)
Auger electron spectroscopy combined with ion etching was used to study the effect of ion doping on the distribution profiles of atoms in silicon in contact with its surface. It has been established that preliminary implantation of Ba+ ions with E0=0
Externí odkaz: https://doaj.org/article/93ac3149c4de4afb96438a20f6647c0c
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3
Akademický článek
Changes in the electronic structure of the Si surface as a result of ion implantation
Autor: Donaev S.B., Ziyamukhamedova U.A., Kenjaeva M., Shirinov G.M., Rakhimov A.M., Abduvayitov A.A.
Publikováno v: E3S Web of Conferences, Vol 383, p 04040 (2023)
The composition, structure, and physicochemical properties of the surface and near-surface layers of silicon doped with low-energy (E0
Externí odkaz: https://doaj.org/article/49d0d68575a741538e533053e2809f76
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4
Akademický článek
Effect of the Implantation of Ions on the Composition and Electronic Structure of CdS Films.
Autor: Umirzakov, B. E., Sodikjanov, J. Sh., Isakhanov, Z. A., Abduvayitov, A. A.
Publikováno v: Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques; Jun2024, Vol. 18 Issue 3, p594-597, 4p
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5
Akademický článek
Effect of Electron Bombardment on the Composition and Structure of CaF2/Si(111) Films.
Autor: Abduvayitov, A. A., Tashmukhamedova, D. A., Umirzakov, B. E., Mamadalimov, A. T.
Publikováno v: Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques; Apr2024, Vol. 18 Issue 2, p491-494, 4p
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7
Akademický článek
Morphology, Composition, and Electronic Structure of the Surface of Thin CdS Films Grown on a Mo(III) Surface.
Autor: Umirzakov, B. E., Abduvayitov, A. A., Isakhanov, Z. A., Sodikjanov, J. Sh.
Publikováno v: Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques; Dec2023, Vol. 17 Issue 6, p1278-1281, 4p
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9
Changes in the electronic structure of the Si surface as a result of ion implantation
Autor: S.B. Donaev, U.A. Ziyamukhamedova, M. Kenjaeva, G.M. Shirinov, A.M. Rakhimov, A.A. Abduvayitov
Publikováno v: E3S Web of Conferences. 383:04040
The composition, structure, and physicochemical properties of the surface and near-surface layers of silicon doped with low-energy (E0+ and O2+ ions have been studied using a set of photoelectron and secondary electron spectroscopy methods. It has be
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2d97c782a6bb915fb3fa36eebbcf96da
https://doi.org/10.1051/e3sconf/202338304040
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10
Study of the profiles of the distribution of atoms of the contacting material over the depth of pure and ion-doped silicon
Autor: S.B. Donaev, G.M. Shirinov, S. Ergasheva, A.M. Rakhimov, Shenghao Wang, A.A. Abduvayitov
Publikováno v: E3S Web of Conferences. 383:04041
Auger electron spectroscopy combined with ion etching was used to study the effect of ion doping on the distribution profiles of atoms in silicon in contact with its surface. It has been established that preliminary implantation of Ba+ ions with E0=0
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d8ad8c070580be29d705877166ed3337
https://doi.org/10.1051/e3sconf/202338304041
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