Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Abduvayitov, A. A."'
Autor:
Abduvayitov Akbarjon, Tashmukhamedova Dilnoza, Umirzakov Boltakhodja, Bekpulatov Ilkhom, Khujaniyozov Jumanazar, Loboda Vera
Publikováno v:
St. Petersburg Polytechnical University Journal: Physics and Mathematics, Vol 17, Iss 3 (2024)
In the paper, the effect of bombardment with Ar+ ions on the composition, electronic and crystal structure of the surface layers of bulk single crystal samples and CdF2(111) films has been studied using the methods of Auger electron and ultraviolet p
Externí odkaz:
https://doaj.org/article/45aceb1916e44fcd80e1c31e6647fa9c
Publikováno v:
E3S Web of Conferences, Vol 383, p 04041 (2023)
Auger electron spectroscopy combined with ion etching was used to study the effect of ion doping on the distribution profiles of atoms in silicon in contact with its surface. It has been established that preliminary implantation of Ba+ ions with E0=0
Externí odkaz:
https://doaj.org/article/93ac3149c4de4afb96438a20f6647c0c
Autor:
Donaev S.B., Ziyamukhamedova U.A., Kenjaeva M., Shirinov G.M., Rakhimov A.M., Abduvayitov A.A.
Publikováno v:
E3S Web of Conferences, Vol 383, p 04040 (2023)
The composition, structure, and physicochemical properties of the surface and near-surface layers of silicon doped with low-energy (E0
Externí odkaz:
https://doaj.org/article/49d0d68575a741538e533053e2809f76
Publikováno v:
Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques; Jun2024, Vol. 18 Issue 3, p594-597, 4p
Publikováno v:
Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques; Apr2024, Vol. 18 Issue 2, p491-494, 4p
Publikováno v:
Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques; Dec2023, Vol. 17 Issue 6, p1278-1281, 4p
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 16:860-863
Akademický článek
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Publikováno v:
Technical Physics Letters. 47:620-623
Publikováno v:
Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques; Oct2022, Vol. 16 Issue 5, p860-863, 4p