Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Abdur‐Rehman Anwar"'
Publikováno v:
IET Optoelectronics, Vol 15, Iss 1, Pp 69-74 (2021)
Abstract Two different device structures are numerically studied, and their optoelectronic characteristics with standard structure are compared. The authors minimized the uneven carrier distribution across the active region. By replacing the first qu
Externí odkaz:
https://doaj.org/article/e839599f599a46818d7fd1f0a22c679d
Autor:
Horacio I. Solís-Cisneros, Yaoqiao Hu, Jorge L. Camas-Anzueto, Rubén Grajales-Coutiño, Abdur-Rehman Anwar, Rubén Martínez-Revuelta, Héctor R. Hernández-de-León, Carlos A. Hernández-Gutiérrez
Publikováno v:
Nanomaterials, Vol 12, Iss 23, p 4347 (2022)
In this work, an AlGaN-based Deep-Ultraviolet Light-Emitting Diode structure has been designed and simulated for the zincblende and wurtzite approaches, where the polarization effect is included. DFT analysis was performed to determine the band gap d
Externí odkaz:
https://doaj.org/article/07797d169b684c73aaaa719488900cec
Autor:
Muhammad Usman, Shahzeb Malik, Masroor Hussain, Shazma Ali, Sana Saeed, Abdur-Rehman Anwar, Munaza Munsif
Publikováno v:
Optical Review. 29:498-503
Optical microbarcodes have recently received a great deal of interest because of their suitability for a wide range of applications, such as multiplexed assays, cell tagging and tracking, anticounterfeiting, and product labeling. Spectral barcodes ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9daa8e379c47e0ab80bf14cd4e7dba43
https://zenodo.org/record/7957018
https://zenodo.org/record/7957018
Autor:
S.P. Lepkowski, Abdur-Rehman Anwar
Publikováno v:
Acta Physica Polonica A. 141:130-134
Publikováno v:
IET Optoelectronics, Vol 15, Iss 1, Pp 69-74 (2021)
Two different device structures are numerically studied, and their optoelectronic characteristics with standard structure are compared. The authors minimized the uneven carrier distribution across the active region. By replacing the first quantum bar
Publikováno v:
Critical Reviews in Solid State and Materials Sciences. 46:450-467
Significant progress has been made in the advancement of light-emitting devices in both the blue and the red parts of the emission spectrum. However, the quantum efficiency of green light-emitting ...
Publikováno v:
Ceramics International. 46:18464-18468
Efficiency of GaN-based green light-emitting diodes with various electron blocking layers has been studied numerically. By employing conventional AlGaN, graded AlGaN, quaternary AlGaInN and ternary AlInN electron blocking layers, performance of each
Publikováno v:
Journal of Modern Optics. 67:837-842
In this work, InGaN-based green light-emitting diodes (LEDs) are studied theoretically. We have minimized the problem of asymmetrical carrier distribution in the active region. We have sandwiched t...
Autor:
Horacio Solís-Cisneros, Carlos Alberto Hernández-Gutiérrez, Abdur-Rehman Anwar, Perla Yazmín Sevilla-Camacho, Jorge Luis Camas-Anzueto, Rubén Grajales-Coutiño, Raul Trejo-Hernández, Yenny Lucero Casallas-Moreno, Máximo L´ópez-López
Publikováno v:
Revista Mexicana de Física. 68
Crisis in coronavirus times requires understanding the effects on society and establishing efficient mechanisms to prevent infections. The disinfection of personal protection equipment by UVC light remains a key opportunity area. Therefore, this lett