Zobrazeno 1 - 10
of 131
pro vyhledávání: '"Abdulmecit Türüt"'
Autor:
Mehmet Biber, Şakir Aydoğan, Zakir Çaldıran, Bülent Çakmak, Tevhit Karacalı, Abdulmecit Türüt
Publikováno v:
Results in Physics, Vol 7, Iss , Pp 3444-3448 (2017)
In this study, fabrication of a polycyclic aromatic hydrocarbon/Perylene Tetracarboxylic Di-Imide (PTCDI), donor/acceptor solar cells are presented using physical vapour deposition technique in a 1000 class glove box. An ITO/PEDOT:PSS/Pentacene/PTCDI
Externí odkaz:
https://doaj.org/article/cfffb25ef6214153b13396340eda8b7b
Publikováno v:
Microelectronics Reliability. 51:2216-2222
An Au/Aniline blue (AB)/p-Si/Al structure has been fabricated and then the effect of electron irradiation (12 MeV electron energy and 5 × 1012 e− cm−2 fluence) on the contact parameters of the device has been analysed by using the current–volt
Publikováno v:
Journal of Physics and Chemistry of Solids. 72:1506-1514
Cd/CdS/ n -Si/Au–Sb structure has been fabricated by the S uccessive I onic L ayer A dsorption and R eaction (SILAR) method and the influence of the time dependent or ageing on the characteristic parameters are examined. The current–voltage ( I
Autor:
Ş. Aydoğan, Abdulmecit Türüt
Publikováno v:
Radiation Physics and Chemistry. 80:869-875
A Schottky diode with configuration Au/Carmine/p-Si/Al has been fabricated and it has been seen that the thin film on the p-Si substrate has exhibited a good rectifying behavior. The current–voltage ( I–V ) characteristics of the device have been
Publikováno v:
Solid State Sciences. 13:1369-1374
The effect of 12 MeV energy (3 × 10 12 e − /cm 2 fluency) electron irradiation on Au/Aniline Blue(AB)/ n -Si/Al rectifying device has been studied in terms of the current–voltage ( I – V ), capacitance–voltage ( C – V ), and capacitance–
Publikováno v:
Journal of Alloys and Compounds. 509:6433-6439
The variations in the electrical properties of Cr Schottky contacts formed by electrodeposition technique on n-type Si substrate have been investigated as a function of temperature using current–voltage ( I – V ) and capacitance–voltage ( C –
Publikováno v:
Journal of Radioanalytical and Nuclear Chemistry. 289:145-148
Different radiation and temperature effects on Schottky diodes are technologically important from radiation to sensing applications. We discussed irradiation and temperature dependent electronic properties of Pt/n-InP Schottky contact. Firstly we fab
Publikováno v:
Materials Science in Semiconductor Processing. 14:5-12
We have formed Ni/n-Si SBDs contacts by dc magnetron sputtering Ni on the epitaxy n-type Si. We have introduced the temperature-dependent I–V characteristics of the diodes in the temperature range of 60–320 K. It has been seen that the BH values
Publikováno v:
Microelectronic Engineering. 88:179-182
We have prepared the Au/PbS/n-6H-SiC Schottky diodes with interface layer and the reference Au/n-6H-SiC/Ni Schottky diodes without interface layer to realize Schottky barrier height (SBH) modification in the Au/SiC Schottky diodes. The BH reduction h
Publikováno v:
Vacuum. 85:798-801
The Schottky barrier height (SBH) values have been obtained from the reverse bias capacitance–voltage (C–V) characteristics of Au–Sb/p-GaSe:Gd Schottky barrier diode (SBD) in the temperature range of 180–320 K. The forward bias capacitance–