Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Abdullatif Onen"'
Publikováno v:
Computational Materials Science
Revealing ideal electrode materials with required functionalities is a crucial step to develop high-performance alkali-ion batteries. In this study, we investigate the potential of single- (SL) and multi-layer (ML) arsenene phases (buckled and symmet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f5d484d2d05b8bbd36e3a740731a0393
https://hdl.handle.net/11693/76038
https://hdl.handle.net/11693/76038
Publikováno v:
Journal of Physical Chemistry C
Lateral and vertical heterostructures constructed of two-dimensional (2D) single-layer h-GaN and h-AlN display novel electronic and optical properties and diverse quantum structures to be utilized in 2D device applications. Lateral heterostructures f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0d5a99f5993fc01af0421aee990dd74f
https://doi.org/10.1021/acs.jpcc.7b08344
https://doi.org/10.1021/acs.jpcc.7b08344
Publikováno v:
Computational Materials Science
Similar to bulk semiconductors, alloying suggests a promising strategy to tailor the fundamental properties of two-dimensional (2D) systems with constituent composition. In that sense, detailed understanding of atomic structure and stability analysis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::73ad67901243fb126d24192a8bd29566
https://aperta.ulakbim.gov.tr/record/74131
https://aperta.ulakbim.gov.tr/record/74131
Autor:
Engin Durgun, D. Kecik, Ethem Aktürk, Fatih Ersan, Abdullatif Onen, Salim Ciraci, S. Cahangirov, Mine Konuk, E. Gürbüz
Publikováno v:
Applied Physics Reviews
Potential applications of bulk GaN and AlN crystals have made possible single and multilayer allotropes of these III-V compounds to be a focus of interest recently. As of 2005, the theoretical studies have predicted that GaN and AlN can form two-dime
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5361de454a49e140ce99b6368be9a9c7
https://aperta.ulakbim.gov.tr/record/36333
https://aperta.ulakbim.gov.tr/record/36333
Publikováno v:
Nanoscale
A suspended single layer of GaN in a honeycomb structure is stable in a planar geometry. By stacking these GaN layers one can construct bilayers or multilayers, even new three-dimensional (3D) periodic structures. In this study, we clarified how the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c39c7cbf2386ed58d965b17b8dd56c5c
https://hdl.handle.net/11693/50049
https://hdl.handle.net/11693/50049
Publikováno v:
Physical Review B
In-plane composite structures constructed of the stripes or core/shells of single-layer GaN and AlN, which are joined commensurately, display a diversity of electronic properties that can be tuned by the size of their constituents. In heterostructure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8641e4c216842aa6c6d5bdbb3e2b049b
https://aperta.ulakbim.gov.tr/record/109625
https://aperta.ulakbim.gov.tr/record/109625
Publikováno v:
Physical Review B
Three-dimensional (3D) GaN is a III-V compound semiconductor with potential optoelectronic applications. In this paper, starting from 3D GaN in wurtzite and zinc-blende structures, we investigated the mechanical, electronic, and optical properties of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::09d0ac276656197e5d4d10074556339b
https://aperta.ulakbim.gov.tr/record/56689
https://aperta.ulakbim.gov.tr/record/56689