Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Abdullah S. Almogbel"'
Autor:
Abdullah S. Almogbel, Christian J. Zollner, Burhan K. Saifaddin, Michael Iza, Jianfeng Wang, Yifan Yao, Michael Wang, Humberto Foronda, Igor Prozheev, Filip Tuomisto, Abdulrahman Albadri, Shuji Nakamura, Steven P. DenBaars, James S. Speck
Publikováno v:
AIP Advances, Vol 11, Iss 9, Pp 095119-095119-8 (2021)
The impact of AlGaN growth conditions on AlGaN:Si resistivity and surface morphology has been investigated using metalorganic chemical vapor deposition. Growth parameters including growth temperature, growth rate, and trimethylindium (TMI) flow have
Externí odkaz:
https://doaj.org/article/8a4633fbfbce4d6396f32cc8b4bbeca5
Autor:
Abdullah S. Almogbel, Feng Wu, Bastien Bonef, James S. Speck, Michael Iza, Shuji Nakamura, Burhan K. Saifaddin, Steven P. DenBaars, Christian J. Zollner
Publikováno v:
ACS Photonics. 7:554-561
The disinfection industry would greatly benefit from efficient, robust, high-power deep-ultraviolet light-emitting diodes (UV–C LEDs). However, the performance of UV–C AlGaN LEDs is limited by poor...
Autor:
Abdulrahman M. Albadri, James S. Speck, Steven P. DenBaars, Burhan K. Saifaddin, Hamad Albrithen, Shuji Nakamura, Abdullah S. Almogbel, Christian J. Zollner, Michael Iza, Ahmed Y. Alyamani
Publikováno v:
2019 Compound Semiconductor Week (CSW).
Growth of high quality AlGaN is essential to develop efficient UV-C LEDs. However, growth of AlGaN is challenging due to the lack of native substrates, low surface mobility of Aluminum adatoms and low doping efficiency for p-AlGaN. In this work, we i