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of 6
pro vyhledávání: '"Abdullah Al Mamun Mazumder"'
Autor:
Md. Sherajul Islam, Abdullah Al Mamun Mazumder, Changjian Zhou, Catherine Stampfl, Jeongwon Park, Cary Y. Yang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 235-247 (2023)
For decades, the fundamental driving force behind energy-efficient and cost-effective electronic components has been the downward scaling of electronic devices. However, due to approaching the fundamental limits of silicon-based complementary metal-o
Externí odkaz:
https://doaj.org/article/086fa94cfb74420b8563cb15f8a18319
Publikováno v:
IEEE Access, Vol 10, Pp 30323-30334 (2022)
We demonstrated a nanowire gate-all-around (GAA) negative capacitance (NC) tunnel field-effect transistor (TFET) based on the GaAs/InN heterostructure using TCAD simulation. In the gate stacking, we proposed a tri-layer HfO2/TiO2/HfO2 as a high-K die
Externí odkaz:
https://doaj.org/article/7714c6ff14514f13b07734dc706d29ad
Autor:
Abdullah Al Mamun Mazumder, Md. Soyaeb Hasan, Ahmed I.M. Iskanderani, Md. Rafiqul Islam, Md. Tanvir Hasan, Ibrahim Mustafa Mehedi
Publikováno v:
Results in Physics, Vol 19, Iss , Pp 103679- (2020)
This paper has studied the metal–insulator-semiconductor (MIS) contact for both p- and n-InGaN. We found that the insulator layer thickness has a remarkable effect on the Fermi level pinning and barrier height reduction in MIS contacts. Schottky's
Externí odkaz:
https://doaj.org/article/2568ffa306014236ac2025b29cf5f97a
Autor:
Jason Adams, Thomas Buchheit, Abdullah Al Mamun Mazumder, Biazid Kabir Moghal, Md Fazle Rabbe, Ahsanul Islam, Shahed Reza
Publikováno v:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Publikováno v:
IEEE Access. 10:30323-30334
Autor:
Md. Rasidul Islam, Abdullah Al Mamun Mazumder, Md. Rayid Hasan Mojumder, A. S. M. Zadid Shifat, M. Khalid Hossain
Publikováno v:
Japanese Journal of Applied Physics. 62:011002
Halide perovskites are promising photovoltaic, solar cell, and semiconductor materials. Density-functional theory (DFT) models address compressive and tensile biaxial strain effects on APbCl3, where A = (K, Rb, and Cs). This research shows how A-cati