Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Abdulhadi Nakkar"'
Autor:
Slimane Loualiche, Alain Le Corre, Ibrahim Alghoraibi, Nicolas Bertru, Karine Tavernier, Rozenn Piron, Georges Elias, Nicolas Chevalier, Abdulhadi Nakkar, Antoine Létoublon
Publikováno v:
Japanese Journal of Applied Physics, part 1 : Regular papers, Short Notes
Japanese Journal of Applied Physics, part 1 : Regular papers, Short Notes, 2009, 48 (7), pp.70204. ⟨10.1143/JJAP.48.070204⟩
Japanese Journal of Applied Physics, part 1 : Regular papers, Short Notes, 2009, 48 (7), pp.70204. ⟨10.1143/JJAP.48.070204⟩
InAs quantum dot (QD) formation on InP(001) has been investigated by gas source molecular beam epitaxy as a function of the substrate misorientation, arsenic pressure and temperature. A large improvement on quantum dot shape and density was obtained
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1dea42399cab155fb95bb8c09baed487
https://hal.archives-ouvertes.fr/hal-00485726
https://hal.archives-ouvertes.fr/hal-00485726
Autor:
Christophe Labbé, Delphine Lagarde, Karine Tavernier, Nicolas Chevalier, Andrea Balocchi, Abdulhadi Nakkar, François Doré, Slimane Loualiche, Jacky Even, Cyril Paranthoen, Xavier Marie, Hervé Folliot
Publikováno v:
Indium Phosphide and Related Materials Proceedings (IEEE)
IPRM IEEE Proceedings
Indium Phosphide and Related Materials
Indium Phosphide and Related Materials, May 2008, Versailles, France. pp.1-4, ⟨10.1109/ICIPRM.2008.4702968⟩
IPRM IEEE Proceedings
Indium Phosphide and Related Materials
Indium Phosphide and Related Materials, May 2008, Versailles, France. pp.1-4, ⟨10.1109/ICIPRM.2008.4702968⟩
We present an evidence of lateral coupling between InAs/InP(311)B quantum dots (QD) embedded in a quaternary alloy at high dot surface density (8.3times1010 QD.cm-2). This coupling is highlighted using time-resolved photoluminescence at different det
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::13d96fbbdc465fba3e4dcc77e5d73365
https://hal.science/hal-00487204
https://hal.science/hal-00487204
Autor:
Christophe Labbé, Cyril Paranthoen, Karine Tavernier, Tony Rohel, Abdulhadi Nakkar, S. Richard, J.-P. Burin, Hervé Folliot, Charles Cornet, Slimane Loualiche, F. Thoumyre
Publikováno v:
2008 20th International Conference on Indium Phosphide and Related Materials.
We present photocurrent measurements of InAs/InGaAsP quantum dots embedded in a PIN diode grown on InP(311)B substrates. From the 300 K spectrum we deduce the ground and first excited states of the dots. Their energies are consistent with photolumine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd496203242ac2927c218ea8e16ba791
https://doi.org/10.1109/iciprm.2008.4702977
https://doi.org/10.1109/iciprm.2008.4702977
Autor:
O. Castany, Hervé Folliot, Slimane Loualiche, Cyril Paranthoen, J.-M. Lamy, L. Dupont, Olivier Dehaese, Christophe Levallois, Abdulhadi Nakkar, A. Le Corre
Publikováno v:
IEEE IPRM proceedings
Indium Phosphide & Related Materials IPRM
Indium Phosphide & Related Materials IPRM, 2008, Versailles, France. pp.1, ⟨10.1109/ICIPRM.2008.4703028⟩
Indium Phosphide & Related Materials IPRM
Indium Phosphide & Related Materials IPRM, 2008, Versailles, France. pp.1, ⟨10.1109/ICIPRM.2008.4703028⟩
International audience; Quantum dash based vertical cavity surface emitting lasers (VCSEL) on InP substrate are presented. Single and close stacking layers were successfully grown with molecular beam epitaxy. Optimized quantum dash layers exhibit a s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aa40b68ccfad73695213300d078c6ac9
https://hal.science/hal-00485271
https://hal.science/hal-00485271
Autor:
Abdulhadi Nakkar, Cyril Paranthoen, Ibrahim Alghoraibi, Slimane Loualiche, Rozenn Piron, A. Le Corre, Tony Rohel, Nicolas Bertru, Georges Elias, Hervé Folliot
Publikováno v:
Applied Physics Letters
Applied Physics Letters, 2007, 91, pp.261105. ⟨10.1063/1.2827177⟩
Applied Physics Letters, American Institute of Physics, 2007, 91, pp.261105. ⟨10.1063/1.2827177⟩
Applied Physics Letters, 2007, 91, pp.261105. ⟨10.1063/1.2827177⟩
Applied Physics Letters, American Institute of Physics, 2007, 91, pp.261105. ⟨10.1063/1.2827177⟩
International audience; InAs quantum dot lasers grown on (311)B InP substrates with AlGaInAs barriers have been fabricated and studied. A large decrease of the threshold current with temperature was observed from 110 to 140 K. In the same temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1a78831b5a89b596c6fece12ed150b2b
https://hal.science/hal-00485705
https://hal.science/hal-00485705
Autor:
Olivier Dehaese, H. Folliot, Abdulhadi Nakkar, Christophe Levallois, A. Le Corre, Jean-Michel Lamy, Slimane Loualiche, Jean-Philippe Gauthier, C. Paranthoen
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2009, 95, pp.011117. ⟨10.1063/1.3176437⟩
Applied Physics Letters, 2009, 95, pp.011117. ⟨10.1063/1.3176437⟩
Applied Physics Letters, American Institute of Physics, 2009, 95, pp.011117. ⟨10.1063/1.3176437⟩
Applied Physics Letters, 2009, 95, pp.011117. ⟨10.1063/1.3176437⟩
International audience; The authors report the demonstration of a polarization-controlled vertical-cavity surface-emitting laser (VCSEL), emitting at the telecommunication wavelength. VCSELs are based on an active medium constituted of well elongated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2600e4a2840f76034a2bb60061c80575
https://doi.org/10.1063/1.3176437
https://doi.org/10.1063/1.3176437