Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Abdul Rehman Alamoud"'
Publikováno v:
Journal of Computational Electronics. 14:477-485
In this paper, we propose a new gate engineered dopingless tunnel field effect transistor (GEDL-TFET). GEDL-TFET has double gate and uses metals of different work functions to realize source and drain regions in undoped silicon; a charge plasma conce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37bf08952af3ad2ddca89923f31cb140
https://doi.org/10.1007/s10825-015-0665-5
https://doi.org/10.1007/s10825-015-0665-5
Publikováno v:
Semiconductor Science and Technology. 29:015011
In this paper, we present a new structure of lateral bipolar transistor on selective buried oxide. The device does not use highly doped regions; however, it employs the concept of creating n and p type charge plasma in undoped silicon by using metal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18e2f48ce1e58f329d440b82d8466ee7
https://doi.org/10.1088/0268-1242/29/1/015011
https://doi.org/10.1088/0268-1242/29/1/015011