Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Abdul Rahman M. Alamoud"'
Publikováno v:
IET Circuits, Devices & Systems. 12:33-39
In this study, the authors propose a novel structure of high-electron mobility transistor (HEMT) with significantly improved performance. The novelty of the proposed HEMT is the realisation of two parallel induced electron layers under the source and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::034200da564200c6818508d792ca0bbc
https://doi.org/10.1049/iet-cds.2017.0025
https://doi.org/10.1049/iet-cds.2017.0025
Publikováno v:
Materials Today: Proceedings. 3:449-453
In this paper, we design novel three stage operational amplifiers (3SOA). The proposed 3SOAs uses 45 nm technology node carbon nanotube field effect transistors (CNTFET) as well as the conventional MOSFETs. The proposed structures are hybrid in natur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fb7bc734a7276ccefc10416ea9b5edc
https://doi.org/10.1016/j.matpr.2016.01.041
https://doi.org/10.1016/j.matpr.2016.01.041
Publikováno v:
IEEE Transactions on Electron Devices. 62:3357-3364
In this paper, we address an important issue of low ON current in a Schottky barrier (SB) MOSFET by proposing a novel structure of Schottky MOSFET on silicon on insulator. The proposed Schottky device employs a dual material at the source side and is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2070e5ce529b10434c0572459e5e461c
https://doi.org/10.1109/ted.2015.2464112
https://doi.org/10.1109/ted.2015.2464112
Publikováno v:
Journal of Intelligent & Fuzzy Systems. 24:5-19
The widespread application of fuzzy logic in various fields has been hindered by the problem of low speed of operation of fuzzy processors. Both hardware and software approaches have been adopted to increase the speed of operation of the fuzzy proces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f82b8553d2e991c96e4d940b079f5c6
https://doi.org/10.3233/ifs-2012-0503
https://doi.org/10.3233/ifs-2012-0503
Publikováno v:
Nanotechnology. 26(39)
In this work, design and calibrated simulation of carbon nanotube field effect transistor (CNTFET)-based cascode operational transconductance amplifiers (COTA) have been performed. Three structures of CNTFET-based COTAs have been designed using HSPIC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::58a9d53dcf1ffd05bfb0e38d6f60f665
https://pubmed.ncbi.nlm.nih.gov/26349429
https://pubmed.ncbi.nlm.nih.gov/26349429
Autor:
Abdul Rahman M. Alamoud, Humyra Shabir, Faisal Bashir, Sajad A. Loan, Mohammad Rafat, M. Nizamuddin, Asim M. Murshid, Shuja A. Abbasi
Publikováno v:
Transactions on Engineering Technologies ISBN: 9789401795876
Charge plasma based devices are gaining interest due to various reasons, since these devices doesn’t require conventional ways of creating different doping regions, therefore these devices are free from various doping related issues related, as ran
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7481b6b808e902f25fc353000c394117
https://doi.org/10.1007/978-94-017-9588-3_17
https://doi.org/10.1007/978-94-017-9588-3_17
Autor:
Shuja A. Abbasi, Sajad A. Loan, Faisal Bashir, Humyra Shabir, Abdul Rahman M. Alamoud, Asim M. Murshid, M. Nizamuddin
Publikováno v:
Transactions on Engineering Technologies ISBN: 9789401795876
MOS technology is convenient for implementing OTAs because MOSFETs are inherently voltage-controlled current devices. A variety of CMOS OTAs with different topologies have been developed for different purposes. In this chapter, design and simulation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1155d561ee38a047f0ea49ddafe0d391
https://doi.org/10.1007/978-94-017-9588-3_18
https://doi.org/10.1007/978-94-017-9588-3_18
Autor:
Humyra Shabir, Faisal Bashir, Asim M. Murshid, M. Nizamuddin, Shuja A. Abbasi, Sajad A. Loan, Abdul Rahman M. Alamoud
Publikováno v:
Transactions on Engineering Technologies ISBN: 9789401795876
The metal source/drain (MSD) Schottky barrier MOSFET offers several benefits enabling the scaling of MOSFET below 30 nm gate lengths. MSD Schottky barrier MOSFET possesses low parasitic S/D resistance, abrupt junctions that enable the scaling of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b48ba1f8b533df74afdbefc5a66554e6
https://doi.org/10.1007/978-94-017-9588-3_20
https://doi.org/10.1007/978-94-017-9588-3_20
Publikováno v:
ICM
In this paper, we propose a new structure of a lateral bipolar junction transistor (LBJT) on silicon on insulator (SOI), employing multi zone collector drift region. The novelty of the device is the use of charge plasma concept to realize emitter, ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28e78ad6867573370ba596a3a3b5134f
https://doi.org/10.1109/icm.2014.7071796
https://doi.org/10.1109/icm.2014.7071796
Publikováno v:
2014 20th International Conference on Ion Implantation Technology (IIT).
In this work, we propose a new structure of a double gate dopingless metal oxide semiconductor field effect transistor (MOSFET). The proposed device does not employ the conventional ways of ion implantation or diffusion to realize source and drain re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dfed19aec6d235230bd60f6df732f608
https://doi.org/10.1109/iit.2014.6939996
https://doi.org/10.1109/iit.2014.6939996