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pro vyhledávání: '"Abdul‐Azeez S. Al‐Omar"'
Autor:
Abdul‐Azeez S. Al‐Omar
Publikováno v:
Optik. 225:165533
Accurate formulas have been developed using rational Chebyshev approximations for the spectral features/quantities of the Voigt profile and its first two derivatives. The rational polynomial expression for the half width at half maximum (HWHM) of the
Autor:
Abdul‐Azeez S. Al‐Omar
Publikováno v:
Optik. 203:163919
Normalization by the Voigt width was applied to both the Lorentz and Gaussian widths in the half width at half maximum (HWHM) equation. The normalization simplified the HWHM equation into a univariate relation for the normalized Lorentz width η L =
Publikováno v:
Solar Energy Materials and Solar Cells. 94:850-856
The optical performance of thin crystalline silicon solar cells with plasma textured front surface and with porous silicon stack back reflector is analysed. A rigorous analytical ray tracing model, that uses an accurately estimated porous silicon ref
Autor:
Abdul‐Azeez S. Al‐Omar
Publikováno v:
Solid-State Electronics. 50:1656-1666
An analytical model for the position-dependent collection probability in uniformly doped one-dimensional layers with abrupt compositional and bandgap changes is presented. The collection probability is derived from coupled system of diffusion equatio
Publikováno v:
Journal of Applied Physics. 79:2103-2114
A new method for the direct calculation of the two‐dimensional collection probability in pn junction solar cells is presented. Based on its reciprocity properties, the inhomogeneous continuity equation for excess carriers is transformed to a homoge
Publikováno v:
Journal of Applied Physics. 108:074902
A physical interpretation is proposed for the sequence of transformations that macropores embedded in crystalline silicon undergo during high temperature treatments. First, cylindrical pores spheroidize by surface diffusion at constant volume. In the
Publikováno v:
Journal of Applied Physics. 80:1943-1943