Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Abdollah Eskandarian"'
Publikováno v:
Journal of Optoelectronical Nanostructures, Vol 8, Iss 3, Pp 19-40 (2023)
Abstract: The present study proposes a novel indium gallium phosphide/aluminum gallium indium phosphide (InGaP/InAlGaP) double junction solar cell without an anti-reflection coating that includes an upper InGaP cell, a lower InAlGaP cell, and a galli
Externí odkaz:
https://doaj.org/article/cf29042298de4c7c9c911f8839b4ba1f
Publikováno v:
Engineering Reports, Vol 4, Iss 5, Pp n/a-n/a (2022)
Abstract In this article, n‐channel junction‐less transistors (JLTs) with gate lengths in the range of 20–250 nm, having crystalline‐silicon (c‐Si) and polycrystalline‐silicon (poly‐Si) channels are characterized for the short channel e
Externí odkaz:
https://doaj.org/article/b3052c8c6a6e47a38ef243ef38ce76da
Publikováno v:
Indian Journal of Physics. 95:2327-2334
The main objective of the present study is to present a solution for downsizing the promising CIGS solar cells in order to be more flexible, economic and environmentally friendly. To avoid possible degradations due to downsizing, a series of optimiza
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::918d40d5dc0e6d6125a254be695ddcaf
https://doi.org/10.1007/s12648-020-01888-z
https://doi.org/10.1007/s12648-020-01888-z
Publikováno v:
Wireless Personal Communications. 114:3367-3382
In this paper, an enhanced voltage controlled oscillator (VCO) at center frequency 125 GHz with tuning rang of 24% is presented. The proposed idea is based on the tuning capacitance using MOS varactor. The structure is consisted of applying an MOS va
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6fb4b39806628728740c372f4e8d1fbf
https://doi.org/10.1007/s11277-020-07536-3
https://doi.org/10.1007/s11277-020-07536-3
Publikováno v:
Engineering Reports. 4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::afe07a3d2a1c4ba4d8f0f44fd9ef7abc
https://doi.org/10.1002/eng2.12481
https://doi.org/10.1002/eng2.12481
Publikováno v:
Journal of Photonics for Energy. 11
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef39b335a8c16d8c376030aa384c5c57
https://doi.org/10.1117/1.jpe.11.049901
https://doi.org/10.1117/1.jpe.11.049901
Publikováno v:
Microelectronics Reliability. 98:31-41
The threshold voltage is an important device and circuit parameter of any FET structure. In this paper, closed form analytic expressions are derived which determine the dependence of the threshold voltage of DGJLFETs on device dimensions, and the dra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97d84a27971ddb1af9bf90927c899b8d
https://doi.org/10.1016/j.microrel.2019.04.022
https://doi.org/10.1016/j.microrel.2019.04.022
Publikováno v:
Journal of Electronic Materials. 48:5865-5874
In order to suppress the ambipolar current of a junctionless tunneling field effect transistor (JLTFET), this study focuses on the effect of the gate metal on the drain semiconductor, which was modeled as a capacitor by the analytical survey. The cap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6cf93f40685266689b1ae0a97e19e5c3
https://doi.org/10.1007/s11664-019-07335-y
https://doi.org/10.1007/s11664-019-07335-y
Publikováno v:
International Nano Letters, Vol 8, Iss 4, Pp 277-286 (2018)
In this paper, a gallium antimonide junctionless tunnel field-effect transistor based on electrically doped concept (GaSb–EDTFET) is studied and simulated. The performance of the device is analyzed based on the energy band diagram and electric fiel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1207c924bc7e293413851ba71c7df2e1
http://link.springer.com/article/10.1007/s40089-018-0250-6
http://link.springer.com/article/10.1007/s40089-018-0250-6
Publikováno v:
Journal of Photonics for Energy. 10:1
Traditional Cu ( InGa ) Se2 (CIGS) solar cells consist of an Mo bottom contact, p-type CIGS absorber layer, n-type CdS buffer layer, and ZnO window layer including a very thin intrinsic ZnO layer topped with an Al-doped ZnO transparent conducting oxi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09dc5f9f7157e143a2383538bcc1fa0f
https://doi.org/10.1117/1.jpe.10.024504
https://doi.org/10.1117/1.jpe.10.024504