Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Abdi Mohamed Amir"'
Publikováno v:
In Optik April 2020 208
Publikováno v:
2018 International Conference on Communications and Electrical Engineering (ICCEE).
This work deals with the potential benefit of double gate field plate MOS-HEMT using Si3N4 as high-K for RF and analog applications. Analog and RF performances investigation is done using 2D Silvaco TCAD for a wide range of gate voltage (V GS ). The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3cc9d09d529dd3d8b5c9f991c4ca5e6
https://doi.org/10.1109/ccee.2018.8634517
https://doi.org/10.1109/ccee.2018.8634517
Publikováno v:
2018 International Conference on Communications and Electrical Engineering (ICCEE).
In this paper, an analytical investigation regarding the use of double-layer antireflection coatings (ARC) on heterojunction solar cell (HSC), with the aim of suppressing broadband reflection is presented. In this context, we used a general character
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d812f6b26f9e84a7df90c249715764ac
https://doi.org/10.1109/ccee.2018.8634434
https://doi.org/10.1109/ccee.2018.8634434
Publikováno v:
5th International Conference on Design & Technology of Integrated Systems in Nanoscale Era.
The proper design and simulation of future nanoelectronics digital devices requires accurate models of subthreshold behavior. The Gate All Around (GAA) MOSFET is considered one the most promising devices for downscaling below 50nm. However, challenge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::982640045666c3cce598785dfb506f3d
https://doi.org/10.1109/dtis.2010.5487573
https://doi.org/10.1109/dtis.2010.5487573