Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Abderrazak Boutramine"'
Autor:
Driss Barkissy, Samir Melkoud, Es-saïd Es-Salhi, Abderrazak Boutramine, Nassima Benchtaber, Merieme Benaadad, Rachid Ben koujane, Abdelhakim Nafidi
Publikováno v:
Materials Today: Proceedings. 22:41-44
We report here the electronic band structure of nanostructure type II superlattice (SL) InAs(d1 = 21 A)/GaSb(d2 = 24 A) performed in the envelope function formalism. We calculated the energy E(d1), E(kz), E(kp) and the effective mass in the direction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87a5b0de3b5b2f6e12c75ced243c53e7
https://doi.org/10.1016/j.matpr.2019.08.069
https://doi.org/10.1016/j.matpr.2019.08.069
Publikováno v:
Superlattices and Microstructures. 127:54-60
We investigated, theoretically, the electronic band structures, transport and magneto-transport properties of In0.53Ga0.47As(d1 = 10 nm)/InP(d2 = 5 nm) lattice matched superlattice (SL) at 1.7 K. These studies were performed in the envelope function
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c044dad29d050d2089cf0b3d1f5671cf
https://doi.org/10.1016/j.spmi.2018.03.016
https://doi.org/10.1016/j.spmi.2018.03.016
Publikováno v:
Superlattices and Microstructures. 127:151-156
We have used the envelope function formalism (EFF) to investigate the bands structure, energy subbands and carrier's effective mass in the growth direction and in-plan of InAs(d1 = 160 A)/GaSb(d2 = 105 A) semimetallic superlattice. The photodetector
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8d1e5e219d57df4854899a9c051734f
https://doi.org/10.1016/j.spmi.2017.12.036
https://doi.org/10.1016/j.spmi.2017.12.036
Publikováno v:
E3S Web of Conferences, Vol 229, p 01036 (2021)
We have investigated in the bands structure and the effective mass, respectively, along the growth axis and in the plane of InAs (d1=48.5Å)/GaSb(d2=21.5Å) type II superlattice (SL), performed in the envelop function formalism. We studied the semico
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a25fa06c8393c8bb0a6d9f4b853fce69
https://www.e3s-conferences.org/articles/e3sconf/pdf/2021/05/e3sconf_iccsre2021_01036.pdf
https://www.e3s-conferences.org/articles/e3sconf/pdf/2021/05/e3sconf_iccsre2021_01036.pdf
Autor:
Abdellatif Elanique, H. Charifi, Abdelhakim Nafidi, Abderrazak Boutramine, Driss Barkissy, M. Massaq
Publikováno v:
Journal of Low Temperature Physics. 182:185-191
We report here the electronic band structures of symmetric type I GaAs ( $$d_{1}= 2.83$$ nm)/AlAs ( $$d_{2}= 2.83$$ nm) superlattice as a function of the well thickness $$d_{1}$$ and the effect of the valence band offset $$\Lambda $$ , the ratio $$d_
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ceb87b7b3184a1ddf9130821487acac
https://doi.org/10.1007/s10909-015-1437-0
https://doi.org/10.1007/s10909-015-1437-0
Autor:
Abdelhakim Nafidi, Thami El Gouti, Ali Khalal, Driss Barkissy, Abderrazak Boutramine, Nassima Benchtaber
Publikováno v:
Applied Physics A. 123
We report here the theoretical calculations of band structures E(d 1), E(k z , k p ) and effective mass along the growth axis and in the plane of GaAs/Al x Ga1−x As superlattices, in the envelope function formalism. The effect of valence band offse
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73a74e27b4703293ae7f9d3de259f4bd
https://doi.org/10.1007/s00339-016-0629-z
https://doi.org/10.1007/s00339-016-0629-z
Autor:
A. Hannour, Thami El Gouti, Abderrazak Boutramine, Driss Barkissy, Abdellatif Elanique, Abdelhakim Nafidi
Publikováno v:
Applied Physics A. 122
The present work is devoted to the study of band structure and band gap in symmetric InAs (d 1 = 25 A)/GaSb (d 2 = 25 A) type II superlattice. Our calculations were performed in the envelope function formalism with the valence band offset Λ = 570 me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53f997f736fade2b7a025cc6ba74975b
https://doi.org/10.1007/s00339-016-9911-3
https://doi.org/10.1007/s00339-016-9911-3
Autor:
Hassan Chaib, Abdellatif Elanique, Abdelhakim Nafidi, Es-Said El-Frikhe, Driss Barkissy, Abderrazak Boutramine, H. Charifi
Publikováno v:
Applied Physics A. 122
We have investigated the band structure E(d = d 1 + d 2), E(k z) and E(k p), respectively, as a function of the SL period, d, in the growth direction and in plan of InAs(d 1 = 160 A)/GaSb(d 2 = 105 A) type II superlattice, performed in the envelope f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5f5115dcfb90a17cf354f06ca477fa6
https://doi.org/10.1007/s00339-015-9561-x
https://doi.org/10.1007/s00339-015-9561-x
