Zobrazeno 1 - 1
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pro vyhledávání: '"Abdelrahman Elshamy"'
Publikováno v:
Alexandria Engineering Journal, Vol 91, Iss , Pp 30-38 (2024)
This study explores the optimization of a hetero-dielectric tunnel field-effect transistor (HDTFET) structure to improve device performance. By incorporating a high-k oxide pocket in a portion of the source-side gate insulator, a local minimum in the
Externí odkaz:
https://doaj.org/article/08be48c7dd4d499e9bd259eca106a766
