Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Abdellah Aouaj"'
Publikováno v:
Nanoscience &Nanotechnology-Asia. 9:291-297
Background: A novel Dual Material Gate Graded Channel and Dual Oxide Thickness Cylindrical Gate (DMG-GC-DOT) MOSFET is presented in this paper. Methods: Analytical model of drain current is developed using a quasi-two-dimensional cylindrical form of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55b119437998214fb58435857ca5f452
https://doi.org/10.2174/2210681208666180813122145
https://doi.org/10.2174/2210681208666180813122145
Publikováno v:
International Journal of Reconfigurable and Embedded Systems (IJRES). 9:34
A compact model for dual-material gate graded-channel and dual-oxidethickness with two dielectric constant different cylindrical gate (DMG-GC-DOTTDCD) MOSFET was investigated in terms of transconductance, drainconductance and capacitance. Short chann
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::797998fa4df3bd176e707cb218a691c6
https://doi.org/10.11591/ijres.v9.i1.pp34-41
https://doi.org/10.11591/ijres.v9.i1.pp34-41
Publikováno v:
2018 4th International Conference on Optimization and Applications (ICOA).
In this paper, we present a comparison study on the performance of cylindrical gate (CG) MOSFET with graded channel doping (GC), dual metal gate (DMG) and dual oxide thickness (DOT). We develop compact model of short channel characteristics like drai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::334843c32dffbb44206a8de5886638a7
https://doi.org/10.1109/icoa.2018.8370495
https://doi.org/10.1109/icoa.2018.8370495
Publikováno v:
Journal of Electrical & Electronic Systems.
The hetero junctions GaN based offer an excellent potential for power applications at high frequency. This is due to the important energy of the bandgap and high saturation velocity of electrons. The high mobility transistors (HEMT - High Electron Mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bdb9f21025e862b47033efcdd2ba051
https://doi.org/10.4172/2332-0796.1000169
https://doi.org/10.4172/2332-0796.1000169
Publikováno v:
International Journal of Electronics. 99:141-148
This article presents an analytical model of surface potential, threshold voltage and subthreshold swing for a new structure of surrounding-gate MOSFET by combining dual-material gate, graded channel and gate stack. By comparison with published resul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10311266937f137e01711a37e0c82d20
https://doi.org/10.1080/00207217.2011.589737
https://doi.org/10.1080/00207217.2011.589737
Publikováno v:
International Journal of Electronics. 92:437-443
A two-dimensional analytical model for fully depleted cylindrical/surrounding gate MOSFET is presented. We used the evanescent mode analysis to solve the 2D Poisson's equation and to deduce analytically the surface potential and threshold voltage exp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3950af93161bf17edd2664a46e8b305f
https://doi.org/10.1080/08827510412331314412
https://doi.org/10.1080/08827510412331314412
Publikováno v:
2011 Faible Tension Faible Consommation (FTFC).
We are presenting a convergence study of the evanescent model and the polynomial model with and without the Effective Conduction Path Effect (ECPE). These analytic models of the electric potential in the channel are used to analyze the short channel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::523267b0e91edfc7a94daf60233da6b9
https://doi.org/10.1109/ftfc.2011.5948900
https://doi.org/10.1109/ftfc.2011.5948900
Publikováno v:
2011 International Conference on Multimedia Computing and Systems.
This paper presents an analytical model of surface potential, threshold voltage and subthreshold swing for a new structure of surrounding gate (SG) MOSFET by combining Dual-Gate-Material, Graded-Channel and Gate Stack. By comparison with published re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58bbf589401fe6b2ecfec641e33812bd
https://doi.org/10.1109/icmcs.2011.5945711
https://doi.org/10.1109/icmcs.2011.5945711
Publikováno v:
2011 International Conference on Multimedia Computing and Systems.
We are presenting a convergence study of the evanescent model and the polynomial model with and without the Effective Conduction Path Effect (ECPE). These analytic models of the electric potential in the channel are used to analyze the short channel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::851ee4fe9993494bf013dfa25be2bc28
https://doi.org/10.1109/icmcs.2011.5945714
https://doi.org/10.1109/icmcs.2011.5945714
Publikováno v:
2009 International Conference on Multimedia Computing and Systems.
The carbon nanotube transistor (CNTFET) are currently considered among the most promising component to replace the generation of MOSFET transistor, in order to surpass the short channel effects in the component.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34d04b6c91d9e66981455bf8db3f23f4
https://doi.org/10.1109/mmcs.2009.5256697
https://doi.org/10.1109/mmcs.2009.5256697